1. 640×480 pixel active-matrix HEED imaging sensor with HARP target
- Author
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Ryota Tanaka, T. Sato, K. Ogasawara, Kazuto Tsurugashima-shi Sakemura, Takamasa Tsurugashima-shi Yoshikawa, Kenkichi Tanioka, Y. Matsuba, Saburo Okazaki, Atsushi Watanabe, Norifumi Egami, Masakazu Nanba, Nobuyasu Tsurugashima-shi Negishi, Yoshiyuki Okuda, Tomonari Nakada, and Nobuyoshi Koshida
- Subjects
Materials science ,business.industry ,Transistor array ,Active matrix ,law.invention ,Planar ,law ,MOSFET ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,Image sensor ,business ,Low voltage ,Common emitter ,Electronic circuit - Abstract
In this paper, an active-matrix planar-type cold electron emitter array development is studied to fulfill the requirement of high-speed response. This emitter array adopts a novel MIS emitter which is termed HEED (High-efficiency Electron Emission Device) and fabricated on a MOS transistor array formed on a silicon wafer with scan driver circuits. HEED's driving voltage is relatively low (about 20V) and its MIS structure is compatible with silicon planar processing employed for LSI. As a consequence, The HEED is one of the most suitable emitters for an active-matrix drive configuration. The emission current density (defined as the average pixel current per emitter area size) reaches up to 4.4 A/cm . This highly emissive property fulfills the imaging requirement of a HARP target. The specifications of the active-matrix HEED are summarized. The number of the interconnections to drive this chip is applicatory 12 lines. This is another important advantage of the active-matrix drive method.
- Published
- 2007
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