1. Intraband InAs/InAlGaAs/InP Quantum Dot Detectors for the MIR
- Author
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W. Parz, A. J. Lopes, José M. Villas-Bôas, Nelson Studart, Karl Unterrainer, T. Gebhard, Patricia L. Souza, and Mauricio P. Pires
- Subjects
Materials science ,business.industry ,Optical polarization ,Epitaxy ,Gallium arsenide ,chemistry.chemical_compound ,chemistry ,Quantum dot ,Optoelectronics ,Quantum well infrared photodetector ,business ,Quantum well ,Indium gallium arsenide ,Dark current - Abstract
In this work, the authors presented the results of a detailed optical characterization of specially designed stacked self-assembled InAs/InGaAlAs/InGaAs/InP QDIP structures grown by metalorganic vapor phase epitaxy. The QDIP active region consists of an InGaAs quantum well grown on InGaAlAs followed by a thin InGaAlAs layer on top of which the dots are nucleated. The ternary and the quaternary material are lattice matched to InP. The dots are then covered by a thin InP barrier which helps reducing the dark current and is more convenient to be grown at the same temperature as the dots themselves.
- Published
- 2007