1. Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology
- Author
-
Byeongju Park, Ss. Iyer, Chandrasekharan Kothandaraman, Norman Robson, John M. Safran, Deok-kee Kim, and C. E. Tian
- Subjects
Process variation ,Sensing data ,Reliability (semiconductor) ,Computer science ,Fuse (electrical) ,Electronic engineering ,Chip ,Electromigration ,Device degradation ,Electronic circuit - Abstract
The reliability of CoSi2/p-poly Si electrical fuse (eFUSE) programmed by electromigration for 90nm technology will be presented. Both programmed and unprogrammed fuse elements were shown to be stable through extensive reliability evaluations. A qualification methodology is demonstrated to define an optimized reliable electrical fuse programming window by combining fuse resistance measurements, physical analysis, and functional sensing data. This methodology addresses the impact on electrical fuse reliability caused by process variation and device degradation (e.g., NBTI) in the sensing circuit and allows an adequate margin to ensure electrical fuse reliability over the chip lifetime.
- Published
- 2006