1. Dedicated Instrumentation for Single-Electron Effects Detection in Si Nanocrystal Memories
- Author
-
Salvatore Lombardo, Felice Crupi, Gino Giusi, and Calogero Pace
- Subjects
Bandwidth, Drain current, Integrated circuits, MOSFET devices, Nanocrystals, Silicon ,Floating gate, Low noise acquisition system, MOSFET memory integrated circuits, Wafer-level measurements ,Nonvolatile storage ,Spectrum analyzer ,Noise measurement ,business.industry ,Computer science ,System of measurement ,Bandwidth (signal processing) ,Background noise ,Non-volatile memory ,Data acquisition ,Hardware_GENERAL ,MOSFET ,Bandwidth (computing) ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Optoelectronics ,Instrumentation (computer programming) ,Floating-gate MOSFET ,business - Abstract
In this paper we propose a purposely designed instrumentation and the experimental set-up for the detection of single-electron phenomena in solid-state non-volatile memories based on silicon nanocrystals floating gate MOSFET. The stepwise evolution of the drain current of a memory cell, after a "write" operation, is monitored by means of a purposely designed low noise acquisition system with a bandwidth up to 10 kHz. The advantage of the measurement system background noise and bandwidth over traditional semiconductor parameter analyzer performance is evident on the detection and classification of single-electron events.
- Published
- 2006