Author: "Jones, K.S." / Journal: 1998 international conference on ion implantation technology proceedings (cat no98ex144) - Searchworks@Jio Institute Digital Library Search Results

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Your search keyword '"Jones, K.S."' showing total 6 results

Start Over Author "Jones, K.S." Journal 1998 international conference on ion implantation technology proceedings (cat no98ex144)

6 results on '"Jones, K.S."'

1. Fluorine effect on boron diffusion: chemical or damage?

Author: Liu, J., Downey, D.F., Jones, K.S., and Ishida, E.
Published: 1999
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2. The role of extended defects on the formation of ultra-shallow junctions in ion implanted /sup 11/B/sup +/, /sup 49/BF/sub 2/, /sup 75/As/sup +/ and /sup 31/P/sup +/.

Author: Downey, D.F. and Jones, K.S.
Published: 1999
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3. The chemical effect of fluorine on boron transient enhanced diffusion.

Author: Ishida, E., Downey, D.F., Jones, K.S., and Liu, J.
Published: 1999
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4. Transient enhanced diffusion in low energy arsenic implanted silicon.

Author: Jones, K.S., Downey, D., Miller, H., Chow, J., Chen, J., Puga-Lambers, M., Moller, K., Wright, M., Heitman, E., Glassberg, J., Law, M., Robertson, L., and Brindos, R.
Published: 1999
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5. Defect formation in MeV ion implantation of boron and phosphorus.

Author: Jasper, C., Hoover, A., and Jones, K.S.
Published: 1999
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6. MeV implanted boron and phosphorus photoresist penetration tests.

Author: Miller, H.J., Jasper, C., Smith, T.C., Hoover, A., and Jones, K.S.
Published: 1999
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