1. Characteristics of CMOSFETs with sputter-deposited W/TiN stack gate
- Author
-
Deok-Hyung Lee, Giwon Lee, Suk-Ho Joo, Ju-Bum Lee, Joo-Tae Moon, and Tae-Hun Shim
- Subjects
Materials science ,business.industry ,chemistry.chemical_element ,Substrate (electronics) ,Tungsten ,chemistry ,Stack (abstract data type) ,Sputtering ,Gate oxide ,Electronic engineering ,Optoelectronics ,Dry etching ,Tin ,business ,Sheet resistance - Abstract
W/TiN stack gate has been investigated as a new gate electrode in ULSI CMOSFETs. With the combination of low resistivity of W and Si-midgap workfunction of TiN, very low sheet resistance and the proper characteristics of both types of transistors could be obtained simultaneously. With the deposition of TiN film at high substrate temperature, the breakdown characteristics of gate oxide could be improved considerably. The proper condition of dry etching on this structure has been also obtained.
- Published
- 2002