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In this paper a consideration to design and improve the performance of high frequency self-oscillating electronic ballasts is presented. The proposed method is based on the describing function method and allows minimizing the parasitic elements effects presented above 200 kHz by considering the gate-source parasitic capacitance of power Mosfets and the switching delay times. Its main advantage is a better operating frequency approximation and hence a better performance of the ballast. Experimental results of the proposed method are compared against a conventional method in a frequency range of 200 kHz to 2 MHz, showing the feasibility of the proposed method.

In order to determine the stability of electronic ballasts, it is necessary to use a small-signal model. Various techniques has been proposed to obtain a small signal model; these techniques are complex and require multiple measurements. In this paper, a simple methodology to obtain small-signal model using only a simple test is presented. The parameter of the model are obtained through step response and experimental results validate the procedure.