1. On the properties of GaP supersaturated with Ti
- Author
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Olea Ariza, Javier, Algaidy, S., Prado Millán, Álvaro del, García Hemme, Eric, García Hernansanz, Rodrigo, Montero, Daniel, Caudevilla Gutiérrez, Daniel, González Díaz, Germán, Soria, E., Gonzalo, J., Olea Ariza, Javier, Algaidy, S., Prado Millán, Álvaro del, García Hemme, Eric, García Hernansanz, Rodrigo, Montero, Daniel, Caudevilla Gutiérrez, Daniel, González Díaz, Germán, Soria, E., and Gonzalo, J.
- Abstract
© 2019 Elsevier B.V. All rights reserved. Authors would like to acknowledge the C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation and evaporation processes. Also, the Institute for Optoelectronics Systems and Microtechnology of the Universidad Politécnica de Madrid for photoluminescence experiments. The fabrication of TEM samples were conducted in the Laboratorio de Microscopias Avanzadas at the Instituto de Nanociencia de Aragón (LMA-INA) of the Universidad de Zaragoza. Authors acknowledge the LMA-INA for offering access to their instruments and expertise, and the Centro Nacional de Microelectrónica at the Moncloa Campus for the TEM and XEDS measurements. This work was partially supported by the Spanish Ministry of Science, Innovation and Universities under grants TEC2017-84378-R and RTI 2018-096498-B-I00. The work of D. Montero was supported by the Spanish MINECO under contract BES-2014-067585. This work is part of the project MADRID-PV2 P-2018/EMT-4308 funded by the Regional Government of Madrid with the support from FEDER funds., We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below the bandgap of GaP and it seems to be passivated by a Ga defective GaPO oxide layer during the laser process. Passivation is consistently analyzed by sheet photoconductance and photoluminescence measurements. We report on the structural quality of the resulting layers and analyze the energy of the new optical transitions measured on GaP:Ti. A collapse found in the sheet photoconductance spectra of GaP:Ti samples fabricated on undoped substrates is explained by the negative photoconductivity phenomenon. (C) 2019 Elsevier B.V. All rights reserved., Ministerio de Ciencia e Innovación (MICINN), Ministerio de Economía y Competitividad (MINECO), Comunidad de Madrid/FEDER, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub
- Published
- 2020