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The ability to control and manipulate semiconductor/bio interfaces is essential to enable biological nanofabrication pathways and bioelectronic devices. Traditional surface functionalization methods, such as self-assembled monolayers (SAMs), provide limited customization for these interfaces. Polymer brushes offer a wider range of chemistries, but choices that maintain compatibility with both lithographic patterning and biological systems are scarce. Here, we developed a class of bioinspired, sequence-defined polymers, i.e., polypeptoids, as tailored polymer brushes for surface modification of semiconductor substrates. Polypeptoids featuring a terminal hydroxyl (-OH) group are designed and synthesized for efficient melt grafting onto the native oxide layer of Si substrates, forming ultrathin (∼1 nm) monolayers. By programming monomer chemistry, our polypeptoid brush platform offers versatile surface modification, including adjustments to surface energy, passivation, preferential biomolecule attachment, and specific biomolecule binding. Importantly, the polypeptoid brush monolayers remain compatible with electron-beam lithographic patterning and retain their chemical characteristics even under harsh lithographic conditions. Electron-beam lithography is used over polypeptoid brushes to generate highly precise, binary nanoscale patterns with localized functionality for the selective immobilization (or passivation) of biomacromolecules, such as DNA origami or streptavidin, onto addressable arrays. This surface modification strategy with bioinspired, sequence-defined polypeptoid brushes enables monomer-level control over surface properties with a large parameter space of monomer chemistry and sequence and therefore is a highly versatile platform to precisely engineer semiconductor/bio interfaces for bioelectronics applications.

We report a method for the directed self-assembly (DSA) of block copolymers (BCPs) in which a first BCP film deploys homopolymer brushes, or "inks", that sequentially graft onto the substrate's surface via the interpenetration of polymer molecules during the thermal annealing of the polymer film on top of existing polymer brushes. By selecting polymer "inks" with the desired chemistry and appropriate relative molecular weights, it is possible to use brush interpenetration as a powerful technique to generate self-registered chemical contrast patterns at the same frequency as that of the domains of the BCP. The result is a process with a higher tolerance to dimensional and chemical imperfections in the guiding patterns, which we showcase by implementing DSA using homopolymer brushes for the guiding features as opposed to more robust cross-linkable mats. We find that the use of "inks" does not compromise the line width roughness, and the quality of the DSA as a lithographic mask is verified by implementing a robust "dry lift-off" pattern transfer.

High capacity polymer dielectrics that operate with high efficiencies under harsh electrification conditions are essential components for advanced electronics and power systems. It is, however, fundamentally challenging to design polymer dielectrics that can reliably withstand demanding temperatures and electric fields, which necessitate the balance of key electronic, electrical and thermal parameters. Herein, we demonstrate that polysulfates, synthesized by sulfur(VI) fluoride exchange (SuFEx) catalysis, another near-perfect click chemistry reaction, serve as high-performing dielectric polymers that overcome such bottlenecks. Free-standing polysulfate thin films from convenient solution processes exhibit superior insulating properties and dielectric stability at elevated temperatures, which are further enhanced when ultrathin (~5 nm) oxide coatings are deposited by atomic layer deposition. The corresponding electrostatic film capacitors display high breakdown strength (>700 MV m-1) and discharged energy density of 8.64 J cm-3 at 150 °C, outperforming state-of-the-art free-standing capacitor films based on commercial and synthetic dielectric polymers and nanocomposites.

Hierarchical assemblies from block copolymer (BCP)-based supramolecules have shown immense potential as programmable materials owing to their versatility for incorporating functional molecules and provide access to arrays of hierarchical structures. However, there remains a knowledge gap on the formation of the supramolecule in solution. Here, we applied NMR techniques to investigate the solution-phase behavior of the most studied supramolecular systems, polystyrene-block-poly(4-vinylpyridine)(3-pentadecylphenol) (PS-b-P4VP(PDP)r). The results show that the supramolecule likely adopts a coil-comb conformation, despite the small molecule's (PDP) rapid exchange between the bonded and free states. The exchange rate (>104 s-1) exceeds the NMR time scale at the frequency of interest. The supramolecules form under dilute conditions (∼2 vol %) and are attributed to the enthalpic gain of the hydrogen bonding between the PDP and 4VP. As the solute concentration increases (>10 vol %), the supramolecule forms micelle-like aggregates with PDP accumulated within the comb-block's pervaded volume based on analysis of the apparent molecular weight, viscosity, and chain dynamics. This work sheds light on the long-standing question regarding the evolution of the constituents in the BCP-based supramolecule in solution and provides valuable guidance toward their solution-based processing and morphological control.

Droplets capture an environment-dictated equilibrium state of a liquid material. Equilibrium, however, often necessitates nanoscale interface organization, especially with formation of a passivating layer. Herein, we demonstrate that this kinetics-driven organization may predispose a material to autonomous thermal-oxidative composition inversion (TOCI) and texture reconfiguration under felicitous choice of trigger. We exploit inherent structural complexity, differential reactivity, and metastability of the ultrathin (∼0.7-3 nm) passivating oxide layer on eutectic gallium-indium (EGaIn, 75.5% Ga, 24.5% In w/w) core-shell particles to illustrate this approach to surface engineering. Two tiers of texture can be produced after ca. 15 min of heating, with the first evolution showing crumpling, while the second is a particulate growth above the first uniform texture. The formation of tier 1 texture occurs primarily because of diffusion-driven oxide buildup, which, as expected, increases stiffness of the oxide layer. The surface of this tier is rich in Ga, akin to the ambient formed passivating oxide. Tier 2 occurs at higher temperature because of thermally triggered fracture of the now thick and stiff oxide shell. This process leads to inversion in composition of the surface oxide due to higher In content on the tier 2 features. At higher temperatures (≥800 °C), significant changes in composition lead to solidification of the remaining material. Volume change upon oxidation and solidification leads to a hollow structure with a textured surface and faceted core. Controlled thermal treatment of liquid EGaIn therefore leads to tunable surface roughness, composition inversion, increased stiffness in the oxide shell, or a porous solid structure. We infer that this tunability is due to the structure of the passivating oxide layer that is driven by differences in reactivity of Ga and In and requisite enrichment of the less reactive component at the metal-oxide interface.

Droplets capture an environment-dictated equilibrium state of a liquid material. Equilibrium, however, often necessitates nanoscale interface organization, especially with formation of a passivating layer. Herein, we demonstrate that this kinetics-driven organization may predispose a material to autonomous thermal-oxidative composition inversion (TOCI) and texture reconfiguration under felicitous choice of trigger. We exploit inherent structural complexity, differential reactivity, and metastability of the ultrathin (∼0.7-3 nm) passivating oxide layer on eutectic gallium-indium (EGaIn, 75.5% Ga, 24.5% In w/w) core-shell particles to illustrate this approach to surface engineering. Two tiers of texture can be produced after ca. 15 min of heating, with the first evolution showing crumpling, while the second is a particulate growth above the first uniform texture. The formation of tier 1 texture occurs primarily because of diffusion-driven oxide buildup, which, as expected, increases stiffness of the oxide layer. The surface of this tier is rich in Ga, akin to the ambient formed passivating oxide. Tier 2 occurs at higher temperature because of thermally triggered fracture of the now thick and stiff oxide shell. This process leads to inversion in composition of the surface oxide due to higher In content on the tier 2 features. At higher temperatures (≥800 °C), significant changes in composition lead to solidification of the remaining material. Volume change upon oxidation and solidification leads to a hollow structure with a textured surface and faceted core. Controlled thermal treatment of liquid EGaIn therefore leads to tunable surface roughness, composition inversion, increased stiffness in the oxide shell, or a porous solid structure. We infer that this tunability is due to the structure of the passivating oxide layer that is driven by differences in reactivity of Ga and In and requisite enrichment of the less reactive component at the metal-oxide interface.