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The book presents the basic steps and the technical implementation of individual processes for microelectronic circuit integration in silicon. Interaction and influences of e. g. oxidation, etching, doping and thermal processes for integrating CMOS- and Bipolar circuits are discussed in detail, beginning with the purification of silicon up to the encapsulated integrated circuit. It includes modern processes like atomic layer deposition and etching for nanoscale structures and compares improvements like silicide contacts, copper metallization, high-k dielectrics, and SOI and FINFET structures. All processes are presented looking from the process engineer's view.

Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient'For contributions to silicon-on-insulator technology and thin body devices.'In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator'It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI.'--Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan'FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before.'--Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France'This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it.'--Professor Alexander Zaslavsky, Brown University, USA'A superbly written book on SOI technology by a master in the field.'--Professor Yuan Taur, University of California, San Diego, USA'The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book.'--Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author'It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book.'- Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient - Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices - Discusses FD-SOI's most promising device structures for memory, sensing and emerging applications

Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results. The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination. The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others. - Focuses on cleaning techniques including wet, plasma and other surface conditioning techniques used to manufacture integrated circuits - Reliable reference for anyone that manufactures integrated circuits or supplies the semiconductor and microelectronics industries - Covers processes and equipment, as well as new materials and changes required for the surface conditioning process

Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently.This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors.Since the SOI detector has both a thick sensing region and CMOS transistors in amonolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics

5. 2. Distinction between thick- and thin-film devices.................... 109 5. 3. I-V Characteristics................................................................................. 112 5. 3. 1. Threshold voltage................................................................... 11 2 5. 3. 2. Body effecL................................................................................ 1 1 8 5. 3. 3. Short-channel effects............................................................ 120 5. 3. 4. Output characteristics........................................................... 1 24 5. 4. Transconductance and mobility....................................................... 129 5. 4. 1 Transconductance.................................................................... 129 5. 4. 2. Mobility....................................................................................... 130 5. 5. Subthreshold slope................................................................................. 132 5. 6. Impact ionization and high-field effects...................................... 13 9 5. 6. 1. Kink effecL................................................................................. 1 39 5. 6. 2. Hot-electron degradation..................................................... 143 5. 7. Parasitic bipolar effects....................................................................... 145 5. 7. 1. Anomalous subthreshold slope......................................... 1 45 5. 7. 2. Reduced drain breakdown voltage.................................. 14 7 5. 8. Accumulation-mode p-channel MOSFET....................................... 14 9 CHAPTER 6 - Other SOl Devices............................................................................. 1 5 9 6. 1. Non-conventional devices adapted from bulk........................... 159 6. 1. 1. COMFET........................................................................................ 160 6. 1. 2. High-voltage lateral MOSFET.............................................. 1 6 1 6. 1. 3. PIN photodiode........................................................................ 162 6. 1. 4. JFET............................................................................................... 163 6. 2. Novel SOl devices................................................................................... 164 6. 2. 1. Lubistor..............................................................

Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit. The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley's theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor. Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device First book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies Approaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors/ Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors/ Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu­ siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri­ butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterization. This e-book employs a tutorial approach to explain the principles and applications of each technique specifically tailored for graduate students and postdoctoral researchers. Selected topics include optical, electron beam, ion beam and synchrotron x-ray techniques. Unlike earlier references, this e-book specifically discusses strain metrology with both depth and focus.

Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate students specializing on microelectronics or optoelectronics.

FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the'Advanced non-classical CMOS devices'category. Of all the existing multigate devices, the FinFET is the most widely known. FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.

The second Edition of the Handbook of Silicon Wafer Cleaning Technology is intended to provide knowledge of wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits. The integration of the clean processes into the device manufacturing flow will be presented with respect to other manufacturing steps such as thermal, implant, etching, and photolithography processes. The Handbook discusses both wet and plasma-based cleaning technologies that are used for removing contamination, particles, residue, and photoresist from wafer surfaces. Both the process and the equipment are covered. A review of the current cleaning technologies is included. Also, advanced cleaning technologies that are under investigation for next generation processing are covered; including supercritical fluid, laser, and cryoaerosol cleaning techniques. Additionally theoretical aspects of the cleaning technologies and how these processes affect the wafer is discussed such as device damage and surface roughening will be discussed. The analysis of the wafers surface is outlined. A discussion of the new materials and the changes required for the surface conditioning process used for manufacturing is also included. - Focused on silicon wafer cleaning techniques including wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits - As this book covers the major technologies for removing contaminants, it is a reliable reference for anyone that manufactures integrated circuits, or supplies the semiconductor and microelectronics industries - Covers processes and equipment, as well as new materials and changes required for the surface conditioning process - Editors are two of the top names in the field and are both extensively published - Discusses next generation processing techniques including supercritical fluid, laser, and cryoaerosol

5. 2 RF Building Blocks................................................................. 214 5. 2. 1 Piezoelectric Oscillators.............................................. 215 5. 2. 2 Voltage Reference Generator....................................... 220 5. 2. 3 Transmit/Receive Switches......................................... 224 5. 2. 4 Low-Noise Amplifiers (LNAs).................................... 226 5. 2. 5 Power Amplifiers (PAs)............................................... 228 5. 2. 6 Mixers and Image-Rejection Receiver........................ 230 5. 2. 7 Voltage-Controlled Oscillator (VCO).......................... 242 5. 2. 8 Limiting Amplifiers..................................................... 248 5. 2. 9 gm-C Filters................................................................. 250 5. 3 A/D and D/A Converters......................................................... 254 5. 3. 1 Cyclic A/D Converter.................................................. 255 5. 3. 2 Sigma-Delta A/D Converter........................................ 264 5. 3. 3 Current-Steering D/A Converter.................................. 270 5. 4 DC-DC Converter.................................................................... 276 5. 4. 1 Design of DC-DC Converter....................................... 276 5. 4. 2 Switched-Capacitor (SC)-Type Converter................... 276 5. 4. 3 Buck Converter............................................................ 279 5. 4. 4 Applicable Zones for SC-Type and Buck Converters................................................................... 283 5. 4. 5 On-chip Distributed Power Supplies for Ultralow-Power LSIs................................................... 285 5. 5 I/O and ESD-Protection Circuitry for Ultralow-Power LSIs.. 291 5. 5. 1 Standard Interface Trends............................................ 291 5. 5. 2 Problems with I/O Circuits for 0. 5-V/3. 3-V Conversion................................................................... 292 5. 5. 3 Guidelines for Design of Interface Circuits................. 293 5. 5. 4 Performance of I/O Circuits........................................ 297 5. 5. 5 ESD Protection with FD-SOI Devices........................ 298 5. 5. 6 Design and Layout Requirements for ESD Protection.................................................................... 300 5. 6 Summary................................................................................. 303 References............................................................................... 304 viii 6. SPICE Model for SOI MOSFETs..............................................

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 µm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.

SIMOX explores Separation-by-IMplanted-OXygen technology, a method of fabricating silicon-on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing.

Silicon on insulator (SOI) is a very attractive technology for large volume integrated circuit production and is particularly good for low-voltage, low-power and high-speed digital systems. SOI has also proved to be effective in various niche and growing markets. IC processes based on SOI are known to reduce susceptibility to radiation, and have been used for many years in high radiation environments. SOI is also used for power integrated circuits, micro-electromechanical systems (MEMS), integrated optics and high temperature applications. SOI offers numerous opportunities and challenges in the design of low-voltage and low-power CMOS circuits for both analog and digital applications. The benefits of this technology for digital applications have been clear for many years. The exploitation of SOI for analog and memory subsystems, meanwhile, has lagged behind digital developments, but is now beginning to attain a level of parity, with circuits that are in some cases improved over their bulk counterparts. SOI is suitable for digital, memory and analog designs, although it is not necessarily straightforward to convert circuits developed for bulk processes into SOI. Memory and most analog circuits either interface to, or are incorporated within, a digital environment. The design of analog circuits on SOI, in a mixed signal environment, and memory design in an embedded memory application are discussed. Various processes are examined and comparison is made between bulk and SOI circuit design concepts. SOI is the process of choice in various RF applications, particularly when digital circuitry is required. SOI Design: Analog Memory and Digital Techniques examines some of the basics, but is primarily concerned with circuit related issues. Static and dynamic logic circuit design has previously been studied in some detail, however, memory design for SOI and analog circuit designs have hitherto been examined onlyin a piecemeal manner. SOI material is considered here in terms of implementation that are promising or have been used elsewhere in circuit development, with historical perspective where appropriate. SOI Design: Analog, Memory and Digital Techniques will be of interest to circuit design engineers. It is also intended as a general graduate level text to introduce state of the art design principles for SOI circuit design.

Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood. SOI Circuit Design Concepts first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well. SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.

The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).

Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.