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The power of surface chemistry to create atomically precise nanoarchitectures offers intriguing opportunities to advance the field of quantum technology. Strategies for building artificial electronic lattices by individually positioning atoms or molecules result in precisely tailored structures but lack structural robustness. Here, taking the advantage of strong bonding of Br atoms on noble metal surfaces, we report the production of stable quantum corrals by dehalogenation of hexabromobenzene molecules on a preheated Au(111) surface. The byproducts, Br adatoms, are confined within a new surface reconstruction pattern and aggregate into nanopores with an average size of 3.7+-0.1 nm, which create atomic orbital-like quantum resonance states inside each corral due to the interference of scattered electron waves. Remarkably, the atomic orbitals can be hybridized into molecular-like orbitals with distinct bonding and anti-bonding states. Our study opens up an avenue to fabricate quantum structures with high yield and superior robustness., Comment: 15 pages, 5 figures; Including supporting information. The paper has been accepted in Nano Letters. (Email: mzhou@buaa.edu.cn)

We investigated the magnetic properties of (La$_{1-x}$Ba$_{x}$)(Zn$_{1-x}$Mn$_{x}$)AsO with $x$ varying from 0.005 to 0.05 at an external magnetic field of 1000 Oe. For doping levels of $x$ $\leq$ 0.01, the system remains paramagnetic down to the lowest measurable temperature of 2 K. Only when the doping level increases to $x$ = 0.02 does the ferromagnetic ordering appear. Our analysis indicates that antiferromagnetic exchange interactions dominate for $x$ $\leq$ 0.01, as shown by the negative Weiss temperature fitted from the magnetization data. The Weiss temperature becomes positive, i.e., ferromagnetic coupling starts to dominate, for $x$ $\geq$ 0.02. The Mn-Mn spin interaction parameter $\mid$$2J/k_B$$\mid$ is estimated to be in the order of 10 K for both $x$ $\leq$ 0.01 (antiferromagnetic ordered state) and $x$ $\geq$ 0.02 (ferromagnetic ordered state). Our results unequivocally demonstrate the competition between ferromagnetic and antiferromagnetic exchange interactions in carrier-mediated ferromagnetic systems., Comment: 9 pages, 3 figures

Diluted ferromagnetic semiconductors (DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronics (spintronics) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in III-V (Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature $T_C$ of 230 K has been achieved in (Ba,K)(Zn,Mn)$_2$As$_2$. However, most DMSs, including (Ga,Mn)As, are p-type, i.e., the carriers that mediate ferromagnetism are holes. For practical applications, DMS with n-type carriers are also advantageous. Here we report the successful synthesis of a II-II-V diluted ferromagnetic semiconductor with n-type carriers, Ba(Zn,Co)$_2$As$_2$. Magnetization measurements show that the ferromagnetic transition occurs up to $T_{C} \sim$ 45 K. Hall effect and Seebeck effect measurements jointly confirm that the dominant carriers are electrons. Through muon spin relaxation ($\mu$SR), a volume sensitive magnetic probe, we have also confirmed that the ferromagnetism in Ba(Zn,Co)$_2$As$_2$ is intrinsic and the internal field is static., Comment: 8 pages, 6 figures. Developed work of 1403.4019

(La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in (La1-xSrx)(Zn0.9Mn0.1)AsO. 10 % Sr doping results in a ferromagnetic ordering below TC ~ 30 K. Increasing Sr concentration up to 30 % heavily suppresses the Curie temperature and saturation moments. Neutron scattering measurements indicate that no structural transition occurs for (La0.9Sr0.1)(Zn0.9Mn0.1)AsO below 300 K., Comment: Submitted to EPL

We use muon spin relaxation (muSR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li1.15(Zn0.9Mn0.1)P with T_C ~ 22 K. MuSR results confirm the gradual development of ferromagnetic ordering below T_C with a nearly 100% magnetic ordered volume. Despite its low carrier density, the relation between static internal field and Curie temperature observed for Li(Zn,Mn)P is consistent with the trend found in (Ga,Mn)As and other bulk DFSs, indicating these systems share a common mechanism for the ferromagnetic exchange interaction. Li1+y(Zn1-xMnx)P has the advantage of decoupled carrier and spin doping, where Mn2+ substitution for Zn2+ introduces spins and Li+ off-stoichiometry provides carriers. This advantage enables us to investigate the influence of overdoped Li on the ferromagnetic ordered state. Overdoping Li suppresses both T_C and saturation moments for a certain amount of spins, which indicates that more carriers are detrimental to the ferromagnetic exchange interaction, and that a delicate balance between charge and spin densities is required to achieve highest T_C.

We investigate the static and dynamic spin susceptibility of the 111 type Fe-based superconductor LiFeP with Tc ~ 5 K through the measurement of Knight shift 31K and the spin-lattice relaxation rate 1/T1 at 31P site by nuclear magnetic resonance. The constant 31K, small magnitudes of 1/T1T, along with the resistivity rho ~ T^2 all point to the weak spin correlations in LiFeP. 1/T1T display small enhancement toward Tc, indicating that the superconductivity is intimately correlated with the antiferromagnetic spin fluctuations., Comment: Accepted for publication in EPL

We report the synthesis and characterization of bulk form diluted magnetic semiconductors Ba(Zn1-2xMnxCox)2As2 (0 <= x <= 0.15) with a crystal structure identical to that of 122-type Fe-based superconductors. Mn and Co co-doping into the parent compound BaZn2As2 results in a ferromagnetic ordering below TC ~ 80 K. Hall effect measurements indicate that the carrier are n-type with the density of ~10^17/cm3. The common crystal structure and excellent lattice matching between the p-type ferromagnetic (Ba1-yKy)(Zn1-xMnx)2As2, the n-type ferromagnetic Ba(Zn1-2xMnxCox)2As2, the antiferrmagnetic BaMn2As2 and the superconducting Ba(Fe1-xCox)2As2 systems make it possible to make various junctions between these systems through the As layer.