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A simple and fast analysis method to sort large data sets into groups with shared distinguishing characteristics is described, and applied to single molecular break junction conductance versus electrode displacement data. The method, based on principal component analysis, successfully sorted data sets based on the projection of the data onto the first or second principal component of the correlation matrix without the need to assert any specific hypothesis about the expected features within the data. This was an improvement on the current correlation matrix analysis approach because it sorted data automatically, making it more objective and less time consuming, and our method is applicable to a wide range of multivariate data sets. Here the method was demonstrated on two systems. First, it was demonstrated on mixtures of two molecules with identical anchor groups, similar lengths, but either a $\pi$ (high conductance) or $\sigma$ (low conductance) bridge. The mixed data was automatically sorted into two groups containing one molecule or the other. Second, it was demonstrated on break junction data measured with the $\pi$ bridged molecule alone. Again the method distinguished between two groups. These groups were tentatively assigned to different geometries of the molecule in the junction., Comment: Maths in SM; NMR in SM

We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (<\mu>) of the films over nearly two orders of magnitude change of <\mu>. The granularity controlled LMR effect here is attributed to the mobility fluctuation induced classical LMR according to the Parish-Littlewood theory. These findings have implications to both the fundamental understanding and magneto-resistive device applications of TI and small bandgap semiconductor materials.

In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect which generally persists to high fields and high temperatures. We have studied the MR of topological insulator Bi2Te3 films from the metallic to semiconducting transport regime. While in metallic samples, the WAL is difficult to identify due to the smallness of the WAL compared to the samples' conductivity, the sharp WAL dip in the MR is clearly present in the samples with higher resistivity. To correctly account for the low field MR by the quantitative theory of WAL according to the Hikami-Larkin-Nagaoka (HLN) model, we find that the classical (linear) MR effect should be separated from the WAL quantum correction. Otherwise the WAL fitting alone yields an unrealistically large coefficient $\alpha$ in the HLN analysis.