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The \emph{p}-type Bi$_{2}$Se$_{3}$ is much desirable as a promising thermoelectric material and topological insulator, while the naturally grown Bi$_{2}$Se$_{3}$ is always \emph{n}-type doped by native point defects. Here we use first-principles calculations to identify the origin of the \emph{n}-type tendency in bulk Bi$_{2}$Se$_{3}$: The Se vacancies (V$_\text{Se1}$ and V$_\text{Se2}$) and Se$_{\text{Bi}}$ antisite dominate the donorlike doping with low formation energy, while the predisposed Bi$_{\text{Se1}}$ defect results in the pair of V$_\text{Se1}$ and Bi interstitial, which is also a donor rather than an acceptor. Moreover, for Bi$_{2}$Se$_{3}$(111) surface, we find that the band structures modulated by the defects explicitly account for the existing experimental observations of \emph{n}-type preference.

The adsorption properties of isolated H$_{2}$O molecule on stoichiometric and reduced (with on-surface oxygen vacancy) ceria(1111) surfaces at low coverage are theoretically investigated by using density-functional-theory+\emph{U} calculations and \textit{ab initio} molecular dynamics simulations. We identify the most stable adsorption configurations on these two kinds of surfaces, which form two hydrogen bonds between the water molecule and the oxide surface. The electronic structures indicate that the hybridization of the molecular orbitals of water and surface-layer O-2\emph{p} states dominates the interactions between adsorbate and substrate. The barrier of 0.51 eV for water diffusion on the stoichiometric surface implies the inertia of water unless up to a high temperature of 600 K, which is confirmed by the molecular dynamics simulations. For the reduced surface, we find that the oxygen vacancy obviously enhances the interaction. Moreover, it is facilitated for water to dissociate into H and OH species with a hydroxyl surface formed, instead of oxidizing the reduced surface with the production of hydrogen gas. In addition, the molecular dynamics simulations at low temperature 100 K confirm the dissociation process.

By using first-principles plane wave calculations, we systematically study the electronic properties of the thin film of antimony in (111) orientation. Considering the spin-orbit interaction, for stoichiometric surface, the topological states keep robust for six bilayers, and can be recovered in the three bilayer film, which are guarantied by time-reversal symmetry and inverse symmetry. For reduced surface doped by Bi or Mn atom, localized 3-fold symmetric features can be identified. Moreover, the non-trivial topological states stand for non-magnetic substituted Bi atom, while can be eliminated by adsorbed or substituted magnetic Mn atom.

The adsorption and dissociation of isolated water molecule on Zr(0001) surface are theoretically investigated for the first time by using density-functional theory calculations. Two kinds of adsorption configurations with almost the same adsorption energy are identified as the locally stable states, i.e., the flat and upright configurations respectively. It is shown that the flat adsorption states on the top site are dominated by the 1$b_{1}$-$d$ band coupling, insensitive to the azimuthal orientation. The diffusion between adjacent top sites reveals that the water molecule is very mobile on the surface. For the upright configuration, we find that besides the contribution of the molecular orbitals 1$b_{1}$ and 3$a_{1}$, the surface$\rightarrow$water charge transfer occurring across the Fermi level also plays an important role. The dissociation of H$_{2}$O is found to be very facile, especially for the upright configuration, in good accordance with the attainable experimental results. The present results afford to provide a guiding line for deeply understanding the water-induced surface corrosion of zirconium., Comment: 16 pages, 5 figures

Using first-principles calculations, we systematically study the adsorption behavior of a single molecular H$_{2}$O on the Be(0001) surface. We find that the favored molecular adsorption site is the top site with an adsorption energy of about 0.3 eV, together with the detailed electronic structure analysis, suggesting a weak binding strength of the H$_{2}$O/Be(0001) surface. The adsorption interaction is mainly contributed by the overlapping between the $s$ and $p_{z}$ states of the top-layer Be atom and the molecular orbitals 1$b_{1}$ and 3$a_{1}$ of H$_{2}$O. The activation energy for H$_{2}$O diffusion on the surface is about 0.3 eV. Meanwhile, our study indicates that no dissociation state exists for the H$_{2}$O/Be(0001) surface., Comment: 10 pages, 4 figures

We study quantum oscillations of the magnetization in Bi$_{2}$Se$_{3}$(111) surface system in the presence of a perpendicular magnetic field. The combined spin-chiral Dirac cone and Landau quantization produce profound effects on the magnetization properties that are fundamentally different from those in the conventional semiconductor two-dimensional electron gas. In particular, we show that the oscillating center in the magnetization chooses to pick up positive or negative values depending on whether the zero-mode Landau level is occupied or empty. An intuitive analysis of these new features is given and the subsequent effects on the magnetic susceptibility and Hall conductance are also discussed., Comment: 5.5 PRB pages, 5 figures

Using first-principles calculations, we systematically study the adsorption behaviors of molecular CO on the Be (0001) surface. By calculating the potential energy surfaces, we find that CO molecularly adsorbs on the Be surface with small energy barriers. The most stable adsorption state is found to be the one at the surface fcc hollow site, and the one at the surface top site is the adsorption state that has the smallest energy barrier. Based on electronic structure analysis, we further reveal that during the molecular adsorption, the $5\sigma$ bonding and $2\pi$ antibonding orbitals of CO hybridize with $s$ and $p_z$ electronic states of Be, causing electrons to transfer from CO to Be., Comment: 15 pages, 6 figures