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Cancer remains a leading cause of death, highlighting the importance of effective radiotherapy (RT). Magnetic resonance-guided linear accelerators (MR-Linacs) enable imaging during RT, allowing for inter-fraction, and perhaps even intra-fraction, adjustments of treatment plans. However, achieving this requires fast and accurate dose calculations. While Monte Carlo simulations offer accuracy, they are computationally intensive. Deep learning frameworks show promise, yet lack uncertainty quantification crucial for high-risk applications like RT. Risk-controlling prediction sets (RCPS) offer model-agnostic uncertainty quantification with mathematical guarantees. However, we show that naive application of RCPS may lead to only certain subgroups such as the image background being risk-controlled. In this work, we extend RCPS to provide prediction intervals with coverage guarantees for multiple subgroups with unknown subgroup membership at test time. We evaluate our algorithm on real clinical planing volumes from five different anatomical regions and show that our novel subgroup RCPS (SG-RCPS) algorithm leads to prediction intervals that jointly control the risk for multiple subgroups. In particular, our method controls the risk of the crucial voxels along the radiation beam significantly better than conventional RCPS., Comment: This work was accepted as a full paper at MICCAI 2024

Ternary transition metal nitride coatings are promising for many applications as they can offer improved hardness and oxidation resistance compared to binary counterparts. A common challenge in the deposition of functional nitride thin films is oxygen contamination. Even low amounts of oxygen contamination can adversely affect the functional properties of the thin films. Here, we present a practical approach for the growth of virtually oxygen-free (Ti, Zr)N thin films. To cover the complete compositional range of (Ti,Zr)N coatings we employ combinatorial reactive co-sputtering. The depositions are carried out with or without applying a low-power radio-frequency (RF) bias voltage to the substrate holder to study the possibility of decelerating energetic oxygen ions and effectively reducing oxygen contamination in the growing film. High-throughput structural analysis and functional property mapping are used to elucidate the synthesis-property relationships. The structural analysis indicates solid solution formation over the entire compositional range, as evidenced by Vegardian lattice scaling, regardless of the applied RF substrate bias. Irrespective of the composition of the films, the application of RF substrate bias leads to a dramatic reduction of oxygen contamination, as demonstrated by X-ray photoelectron spectroscopy (XPS) depth-profile mapping. This is reflected in a significant improvement in the films' conductivity and hardness. We demonstrate that the reduction in oxygen contamination is intrinsic to the process and not due to changes in the microstructure. The approach presented here is applicable to both conductive and insulating substrates and provides a practical route to synthesize nitride thin films with improved purity that can be applied in standard sputter chambers and on many different material systems.

Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically rely on high temperatures and expensive compound targets. In this study, we demonstrate the feasibility of ionized physical vapor deposition to deposit highly oriented AlScN films with minimal defects at lower temperatures. Using metal-ion synchronized high-power impulse magnetron co-sputtering (MIS-HiPIMS) we can selectively bombard the growing film with Al and/or Sc ions to enhance the adatom mobility while simultaneously providing the ability to tune stress and coat complex structures conformally. We find that the Sc solubility in wurtzite AlN is slightly reduced, whereas crystallinity and texture are markedly improved. Disoriented grains, a key challenge in growing AlScN films, are completely removed via substrate biasing, while the residual stress can be tailored by adjusting the same. The measured piezoelectric response of the films is in line with DFT predictions and on par with the current state of the art. Finally, we demonstrate conformal deposition of c-axis textured AlScN on structured Si wafers underlining the promise of ionized PVD for the fabrication of advanced RF filters and next-generation MEMS devices.

The discovery of new functional materials is one of the key challenges in materials science. Combinatorial high-throughput approaches using reactive sputtering are commonly employed to screen unexplored phase spaces. During reactive combinatorial deposition the process conditions are rarely optimized, which can lead to poor crystallinity of the thin films. In addition, sputtering at shallow deposition angles can lead to off-axis preferential orientation of the grains. This can make the results from a conventional structural phase screening ambiguous. Here we perform a combinatorial screening of the Zn-Ta-N phase space with the aim to synthesize the novel semiconductor Zn2TaN3. While the results of the XRD phase screening are inconclusive, including chemical state analysis mapping in our workflow allows us to see a very clear discontinuity in the evolution of the Ta binding environment. This is indicative of the formation of a new ternary phase. In additional experiments, we isolate the material and perform a detailed characterization confirming the formation of single phase WZ-Zn2TaN3. Besides the formation of the new ternary nitride, we map the functional properties of ZnxTa1-xN and report previously unreported clean chemical state analysis for Zn3N2, TaN and Zn2TaN3. Overall, the results of this study showcase common challenges in high-throughput materials screening and highlight the merit of employing characterization techniques sensitive towards changes in the materials' short-range order and chemical state.

Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical vapor deposition (PVD), in contrast to conventional PVD, the film-forming species can be accelerated onto the growing film using substrate-bias potentials. This increas-es the ad-atom mobility, but also deflects the trajectory of ions towards the substrate increasing the texture of the growing film. However, potential gas-ion incorporation in the films limits the feasibility of such approaches for the deposition of defect-sensitive materials. In this work, we report on the oblique-angle deposition of highly c-axis oriented AlN (0002) films, enabled by reactive metal-ion syn-chronized HiPIMS. The effect of critical deposition parameters, such as the magnetic configuration, ion kinetic energies and substrate biasing are investigated. The films deposited using HiPIMS show a more pronounced texture and orientation compared to DCMS films. We find that combining the HiPIMS dep-ositions with a moderate substrate bias of -30 V is sufficient to improve the crystalline quality and tex-ture of the films significantly. To reduce process-gas incorporation, and the formation of point defects, the negative substrate-bias potential is synchronized to the Al-rich fraction of each HiPIMS pulse. This leads to reduced Ar-Ion incorporation and improves the structural properties. The films also show uni-form polarization of the grains making this synthesis route suitable for piezoelectric applications. While the compressive stress in the films is still high, the results demonstrate, that synchronized HiPIMS can yield promising results for the synthesis under oblique-angle deposition conditions - even with low substrate-bias potentials.