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Solving large-scale computationally hard optimization problems using existing computers has hit a bottleneck. A promising alternative approach uses physics-based phenomena to naturally solve optimization problems wherein the physical phenomena evolves to its minimum energy. In this regard, photonics devices have shown promise as alternative optimization architectures, benefiting from high-speed, high-bandwidth and parallelism in the optical domain. Among photonic devices, programmable spatial light modulators (SLMs) have shown promise in solving large scale Ising model problems to which many computationally hard problems can be mapped. Despite much progress, existing SLMs for solving the Ising model and similar problems suffer from slow update rates and physical bulkiness. Here, we show that using a compact silicon photonic integrated circuit optical phased array (PIC-OPA) we can simulate an XY Hamiltonian, a generalized form of Ising Hamiltonian, where spins can vary continuously. In this nanophotonic XY Hamiltonian solver, the spins are implemented using analog phase shifters in the optical phased array. The far field intensity pattern of the PIC-OPA represents an all-to-all coupled XY Hamiltonian energy and can be optimized with the tunable phase-shifters allowing us to solve an all-to-all coupled XY model. Our results show the utility of PIC-OPAs as compact, low power, and high-speed solvers for nondeterministic polynomial (NP)-hard problems. The scalability of the silicon PIC-OPA and its compatibility with monolithic integration with CMOS electronics further promises the realization of a powerful hybrid photonic/electronic non-Von Neumann compute engine.

Thin-Film Lithium Niobate (TFLN) is an emerging integrated photonic platform showing great promise due to its large second-order nonlinearity at microwave and optical frequencies, cryogenic compatibility, large piezoelectric response, and low optical loss at visible and near-infrared wavelengths. These properties enabled Mach-Zehnder interferometer-based devices to demonstrate amplitude- and in-phase/quadrature (IQ) modulation at voltage levels compatible with complementary metal-oxide-semiconductor (CMOS) electronics. Maintaining low-voltage operation requires centimeter-scale device lengths, making it challenging to realize the large-scale circuits required by ever-increasing bandwidth demands in data communications. Reduced device sizes reaching the 10 um scale are possible with photonic crystal (PhC) cavities. So far, their operation has been limited to modulation of amplitudes and required circulators or lacked cascadability. Here, we demonstrate a compact IQ modulator using two PhC cavities operating as phase shifters in a Fabry-Perot-enhanced Michelson interferometer configuration. It supports cascadable amplitude and phase modulation at GHz bandwidths with CMOS-compatible voltages. While the bandwidth limitation of resonant devices is often considered detrimental, their compactness enables dense co-integration with CMOS electronics where clock-rate-level operation (few GHz) removes power-hungry electrical time-multiplexing. Recent demonstrations of chip-scale transceivers with dense-wavelength division multiplied transceivers could be monolithically implemented and driven toward ultimate information densities using TFLN electro-optic frequency combs and our PhC IQ modulators., Comment: 27 pages, 27 figures

Photonic integrated circuit based optical phased arrays (PIC-OPA) are emerging as promising programmable processors and spatial light modulators, combining the best of planar and free-space optics. Their implementation in silicon photonic platforms has been especially fruitful. Despite much progress in this field, demonstrating steerable two-dimensional (2D) OPAs scalable to a large number of array elements and operating with a single wavelength has proven a challenge. In addition, the phase shifters used in the array for programming the far field beam are either power hungry or have a large footprint, preventing implementation of large scale 2D arrays. Here, we demonstrate a two-dimensional silicon photonic phased array with high-speed (~330 KHz) and ultralow power microresonator phase-shifters with a compact radius (~3 {\mu}m) and 2{\pi} phase shift ability. Each phase-shifter consumes an average ~250 {\mu}W static power for resonance alignment and ~50 {\mu}W power for far field beamforming. Such PIC-OPA devices can enable a new generation of compact and scalable low power processors and sensors.

Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate doping level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics., Comment: 18 page manuscript with 5 figures and 1 table, plus 17 page supplementary material