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Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully-consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multi-valley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the Q valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon-driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a $s_{+-}$ character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of $T_c$ on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density., Comment: 17 pages, 8 figures

Since 2014, we have been conducting experiments based on a multidisciplinary collaboration between specialists in theatrical staging and researchers in virtual reality, digital art, and video games. This team focused its work on the similarities and differencesthat exist between real physical actors (actor-performers) and virtual digital actors (avatars). From this multidisciplinary approach, experimental research-creation projects have emerged and rely on a physical actor playing with the image of an avatar, controlled by another physical actor via the intermediary of a low-cost motion-capture system. In the first part of the paper, we will introduce the scenographic design on which our presentation is based, and the modifications we have made in relation to our previous work. Next, in the second section, we will discuss in detail the impact of augmenting the player's game using an avatar, compared to the scenic limitations of the theatrical stage. In part three of the paper, we will discuss the software-related aspects of the project, focusing on exchanges between the different components of our design and describing the algorithms enabling us to utilize the real-time movement of a player via various capture devices. To conclude, we will examine in detail how our experimental system linking physical actors and avatars profoundly alters the nature of collaboration between directors, actors, and digital artists in terms of actor/avatar direction., Comment: Wiley. Challenges of the Internet of Things. Technology, Use, Ethics, 2018

Plasmons and polar phonons are elementary electrodynamic excitations of matter. In 2d and at long wavelengths, they couple to light and act as the system polaritons. They also dictate the scattering of charged carriers. Van der Waals heterostructures offer the opportunity to couple excitations from different layers via long-range Coulomb interactions, modifying both their dispersion and their scattering of electrons. Even when the excitations do not couple, they are still influenced by the screening from all layers, leading to complex dynamical interactions between electrons, plasmons and polar phonons. We develop an efficient ab initio model to solve the dynamical electric response of Van der Waals heterostructures, accompanied by a formalism to extract relevant spectroscopic and transport quantities. Notably, we obtain scattering rates for electrons of the heterostructure coupling remotely with electrodynamic excitations. We apply those developments to BN-capped graphene, in which polar phonons from BN couple to plasmons in graphene. We study the nature of the coupled excitations, their dispersion and their coupling to graphene's electrons. Regimes driven by either phonons or plasmons are identified, as well as a truly hybrid regime at long wavelengths. Those are studied as a function of the graphene's Fermi level and the number of BN layers. In contrast with descriptions in terms of surface-optical phonons, we find that the electron-phonon interaction stems from different modes. Moreover, the dynamical screening of the coupling between BN's LO phonons and graphene's electrons crosses over from inefficient to metal-like depending on the relative value of the phonons' frequency and the energetic onset of interband transitions. While the coupling is significant in general, the associated scattering of graphene's carriers is found to be negligible in the context of electronic transport., Comment: 32 pages, 18 figures

We theoretically investigate the double-resonance Raman spectrum of monolayer graphene down to infrared laser excitation energies. By using first-principles density functional theory calculations, we improve upon previous theoretical predictions based on conical models or tight-binding approximations, and rigorously justify the evaluation of the electron-phonon enhancement found in Ref. [Venanzi, T., Graziotto, L. et al., Phys. Rev. Lett. 130, 256901 (2023)]. We proceed to discuss the effects of such enhancement on the room temperature graphene resistivity, hinting towards a possible reconciliation of theoretical and experimental discrepancies., Comment: 19 pages, 18 figures

The electronic and vibrational properties and electron-phonon couplings of one-dimensional materials will be key to many prospective applications in nanotechnology. Dimensionality strongly affects these properties and has to be correctly accounted for in first-principles calculations. Here we develop and implement a formulation of density-functional and density-functional perturbation theory that is tailored for one-dimensional systems. A key ingredient is the inclusion of a Coulomb cutoff, a reciprocal-space technique designed to correct for the spurious interactions between periodic images in periodic-boundary conditions. This restores the proper one-dimensional open-boundary conditions, letting the true response of the isolated one-dimensional system emerge. In addition to total energies, forces and stress tensors, phonons and electron-phonon interactions are also properly accounted for. We demonstrate the relevance of the present method on a portfolio of realistic systems: BN atomic chains, BN armchair nanotubes, and GaAs nanowires. Notably, we highlight the critical role of the Coulomb cutoff by studying previously inaccessible polar-optical phonons and Frohlich electron-phonon couplings. We also develop and apply analytical models to support the physical insights derived from the calculations and we discuss their consequences on electronic lifetimes. The present work unlocks the possibility to accurately simulate the linear response properties of one-dimensional systems, sheds light on the transition between dimensionalities and paves the way for further studies in several fields, including charge transport, optical coupling and polaritronics., Comment: 15 pages, 7 figures

The main objective of this work is to investigate non-linear errors and pairwise summation using stochastic rounding (SR) in variance computation algorithms. We estimate the forward error of computations under SR through two methods: the first is based on a bound of the variance and Bienaym{\'e}-Chebyshev inequality, while the second is based on martingales and Azuma-Hoeffding inequality. The study shows that for pairwise summation, using SR results in a probabilistic bound of the forward error proportional to log(n)u rather than the deterministic bound in O(log(n)u) when using the default rounding mode. We examine two algorithms that compute the variance, called ''textbook'' and ''two-pass'', which both exhibit non-linear errors. Using the two methods mentioned above, we show that these algorithms' forward errors have probabilistic bounds under SR in O($\sqrt$ nu) instead of nu for the deterministic bounds. We show that this advantage holds using pairwise summation for both textbook and two-pass, with probabilistic bounds of the forward error proportional to log(n)u.

The diffusion of molecules on interstellar grain surfaces is one of the most important driving forces for the molecular complexity in the interstellar medium. Due to the lack of laboratory measurements, astrochemical modeling of grain surface processes usually assumes a constant ratio between the diffusion energy barrier and the desorption energy. This over-simplification inevitably causes large uncertainty in model predictions. We present a new measurement of the diffusion of CO$_2$ molecules on the surface of non-porous amorphous solid water (np-ASW), an analog of the ice mantle that covers cosmic dust grains. A small coverage of CO$_2$ was deposited onto an np-ASW surface at 40~K, the subsequent warming of the ice activated the diffusion of CO$_2$ molecules, and a transition from isolated CO$_2$ to CO$_2$ clusters was seen in the infrared spectra. To obtain the diffusion energy barrier and pre-exponential factor simultaneously, a set of isothermal experiments were carried out. The values for the diffusion energy barrier and pre-exponential factor were found to be $1300\pm110$~K and $10^{7.6\pm0.8}$~s$^{-1}$. A comparison with prior laboratory measurements on diffusion is discussed., Comment: 13 pages, 6 figures

Electron-phonon interaction and phonon frequencies of doped polar semiconductors are sensitive to long-range Coulomb forces and can be strongly affected by screening effects of free carriers, the latter changing significantly when approaching the two-dimensional limit. We tackle this problem within a linear-response dielectric-matrix formalism, where screening effects can be properly taken into account by generalized effective charge functions and the inverse scalar dielectric function, allowing for controlled approximations in relevant limits. We propose complementary computational methods to evaluate from first principles both effective charges -- encompassing all multipolar components beyond dynamical dipoles and quadrupoles -- and the static dielectric function of doped two-dimensional semiconductors, and provide analytical expressions for the long-range part of the dynamical matrix and the electron-phonon interaction in the long-wavelength limit. As a representative example, we apply our approach to study the impact of doping in disproportionated graphene, showing that optical Fr\"ohlich and acoustic piezoelectric couplings, as well as the slope of optical longitudinal modes, are strongly reduced, with a potential impact on the electronic/intrinsic scattering rates and related transport properties., Comment: 28 pages, 11 figures

Coupling regular topologies with optimised routing algorithms is key in pushing the performance of interconnection networks of supercomputers.In this paper we present Dmodc, a fast deterministic routing algorithm for Parallel Generalised Fat-Trees (PGFTs) which minimises congestion risk even under massive network degradation caused by equipment failure.Dmodc computes forwarding tables with a closed-form arithmetic formula by relying on a fast preprocessing phase.This allows complete re-routing of networks with tens of thousands of nodes in less than a second.In turn, this greatly helps centralised fabric management react to faults with high-quality routing tables and no impact to running applications in current and future very large-scale HPC clusters., Comment: arXiv admin note: text overlap with arXiv:2211.11817

Coupling regular topologies with optimized routing algorithms is key in pushing the performance of interconnection networks of HPC systems. In this paper we present Dmodc, a fast deterministic routing algorithm for Parallel Generalized Fat-Trees (PGFTs) which minimizes congestion risk even under massive topology degradation caused by equipment failure. It applies a modulo-based computation of forwarding tables among switches closer to the destination, using only knowledge of subtrees for pre-modulo division. Dmodc allows complete rerouting of topologies with tens of thousands of nodes in less than a second, which greatly helps centralized fabric management react to faults with high-quality routing tables and no impact to running applications in current and future very large-scale HPC clusters. We compare Dmodc against routing algorithms available in the InfiniBand control software (OpenSM) first for routing execution time to show feasibility at scale, and then for congestion risk under degradation to demonstrate robustness. The latter comparison is done using static analysis of routing tables under random permutation (RP), shift permutation (SP) and all-to-all (A2A) traffic patterns. Results for Dmodc show A2A and RP congestion risks similar under heavy degradation as the most stable algorithms compared, and near-optimal SP congestion risk up to 1% of random degradation.

This paper reviews the entire engineering process of trustworthy Machine Learning (ML) algorithms designed to equip critical systems with advanced analytics and decision functions. We start from the fundamental principles of ML and describe the core elements conditioning its trust, particularly through its design: namely domain specification, data engineering, design of the ML algorithms, their implementation, evaluation and deployment. The latter components are organized in an unique framework for the design of trusted ML systems., Comment: This work has been supported by the French government under the "France 2030" program, as part of the SystemX Technological Research Institute Research Institute

Dimensionality provides a clear fingerprint on the dispersion of infrared-active, polar-optical phonons. For these phonons, the local dipoles parametrized by the Born effective charges drive the LO-TO splitting of bulk materials; this splitting actually breaks down in two-dimensional materials. Here, we extend the existing theory to the one-dimensional (1D) case. Combining an analytical model with the implementation of density-functional perturbation theory in 1D boundary conditions, we show that the dielectric splitting in the dispersion relations collapses logarithmically at the zone center. The dielectric properties and the radius of the 1D materials are linked by the present work to these red shifts, opening novel IR and Raman characterization avenues.

Stochastic rounding (SR) offers an alternative to the deterministic IEEE-754 floating-point rounding modes. In some applications such as PDEs, ODEs and neural networks, SR empirically improves the numerical behavior and convergence to accurate solutions while no sound theoretical background has been provided. Recent works by Ipsen, Zhou, Higham, and Mary have computed SR probabilistic error bounds for basic linear algebra kernels. For example, the inner product SR probabilistic bound of the forward error is proportional to $\sqrt$ nu instead of nu for the default rounding mode. To compute the bounds, these works show that the errors accumulated in computation form a martingale. This paper proposes an alternative framework to characterize SR errors based on the computation of the variance. We pinpoint common error patterns in numerical algorithms and propose a lemma that bounds their variance. For each probability and through Bienaym{\'e}-Chebyshev inequality, this bound leads to better probabilistic error bound in several situations. Our method has the advantage of providing a tight probabilistic bound for all algorithms fitting our model. We show how the method can be applied to give SR error bounds for the inner product and Horner polynomial evaluation.

Recently, stochastic rounding (SR) has been implemented in specialized hardware but most current computing nodes do not yet support this rounding mode. Several works empirically illustrate the benefit of stochastic rounding in various fields such as neural networks and ordinary differential equations. For some algorithms, such as summation, inner product or matrixvector multiplication, it has been proved that SR provides probabilistic error bounds better than the traditional deterministic bounds. In this paper, we extend this theoretical ground for a wider adoption of SR in computer architecture. First, we analyze the biases of the two SR modes: SR-nearness and SR-up-or-down. We demonstrate on a case-study of Euler's forward method that IEEE-754 default rounding modes and SR-up-or-down accumulate rounding errors across iterations and that SR-nearness, being unbiased, does not. Second, we prove a O($\sqrt$ n) probabilistic bound on the forward error of Horner's polynomial evaluation method with SR, improving on the known deterministic O(n) bound.

The transport and optical properties of semiconducting transition metal dichalcogenides around room temperature are dictated by electron-phonon scattering mechanisms within a complex, spin-textured and multi-valley electronic landscape. The relative positions of the valleys are critical, yet they are sensitive to external parameters and very difficult to determine directly. We propose a first-principle model as a function valley positions to calculate carrier mobility and Kerr rotation angles. The model brings valuable insights, as well as quantitative predictions of macroscopic properties for a wide range of carrier density. The doping-dependant mobility displays a characteristic peak, the height depending on the position of the valleys. The Kerr rotation signal is enhanced when same spin-valleys are aligned, and quenched when opposite spin-valleys are populated. We provide guidelines to optimize these quantities with respect to experimental parameters, as well as the theoretical support for \emph{in situ} characterization of the valley positions., Comment: 24 pages, 11 figures

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects. This concept exploits the spin-layer locking mechanism present in centrosymmetric materials with local dipole fields, where a weak electric field can easily manipulate just one of the spin channels. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to $k_R = 0.08$ {\AA}$^{-1}$), leading to a $\pi/2$ rotation of the spins over just 1 nm. The monolayer had been predicted to be exfoliable from its experimentally-known 3D bulk counterpart, with a binding energy even lower than graphene. We characterize and model with first-principles simulations the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking., Comment: 11 pages, 9 figures

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.

Van der Waals heterostructures provide a versatile tool to not only protect or control, but also enhance the properties of a 2D material. We use ab initio calculations and semi-analytical models to find strategies which boost the mobility of a current-carrying 2D semiconductor within an heterostructure. Free-carrier screening from a metallic "screener" layer remotely suppresses electron-phonon interactions in the current-carrying layer. This concept is most effective in 2D semiconductors whose scattering is dominated by screenable electron-phonon interactions, and in particular the Fr\"ohlich coupling to polar-optical phonons. Such materials are common and characterised by overall low mobilities in the small doping limit, and much higher ones when the 2D material is doped enough for electron-phonon interactions to be screened by its own free carriers. We use GaSe as a prototype and place it in a heterostructure with doped graphene as the "screener" layer and BN as a separator. We develop an approach to determine the electrostatic response of any heterostructure by combining the responses of the individual layers computed within density-functional perturbation theory. Remote screening from graphene can suppress the long-wavelength Fr\"ohlich interaction, leading to a consistently high mobility around $500$ to $600$ cm$^2$/Vs for carrier densities in GaSe from $10^{11}$ to $10^{13}$ cm$^{-2}$. Notably, the low-doping mobility is enhanced by a factor 2.5. This remote free-carrier screening is more efficient than more conventional manipulation of the dielectric environment, and it is most effective when the separator (BN) is thin., Comment: 20 pages, 14 figures

When complex mechanisms are involved, pinpointing high-performance materials within large databases is a major challenge in materials discovery. We focus here on phonon-limited conductivities, and study 2D semiconductors doped by field effects. Using state-of-the-art density-functional perturbation theory and Boltzmann transport equation, we discuss 11 monolayers with outstanding transport properties. These materials are selected from a computational database of exfoliable materials providing monolayers that are dynamically stable and that do not have more than 6 atoms per unit cell. We first analyse electron-phonon scattering in two well-known systems: electron-doped InSe and hole-doped phosphorene. Both are single-valley systems with weak electron-phonon interactions, but they represent two distinct pathways to fast transport: a steep and deep isotropic valley for the former and strongly anisotropic electron-phonon physics for the latter. We identify similar features in the database and compute the conductivities of the relevant monolayers. This process yields several high-conductivity materials, some of them only very recently emerging in the literature (GaSe, Bi$_2$SeTe$_2$, Bi$_2$Se$_3$, Sb$_2$SeTe$_2$), others never discussed in this context (AlLiTe$_2$, BiClTe, ClGaTe, AuI). Comparing these 11 monolayers in detail, we discuss how the strength and angular dependency of the electron-phonon scattering drives key differences in the transport performance of materials despite similar valley structure. We also discuss the high conductivity of hole-doped WSe$_2$, and how this case study shows the limitations of a selection process that would be based on band properties alone.

High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van der Waals heterostructures formed by graphene and hexagonal boron nitride (hBN) already outperform all known materials in terms of room temperature mobility. Here, we show that the mobility of today's best graphene/hBN devices can be surpassed by more than a factor of three by heterostructures formed by tungsten diselenide (WSe$_2$), graphene and hBN, which can have mobilities as high as 350,000 cm$^2$/(Vs) at room temperature, and resistivities as low as 15 Ohm. The resistivity of these devices shows a much weaker temperature dependence than the one of graphene on any other known substrate. The origin of this behaviour points to modified acoustic phonon bands in graphene and questions our understanding of electron-phonon scattering in van der Waals heterostructures., Comment: 15 pages, 3 figures

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated $(111)$ diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface we show that the electric field exfoliates the sample, separating the electronic states at the valence band top from the bulk projected ones. At the hole doping values considered here, ranging from $n=2.84\times10^{13}$cm$^{-2}$ to $n=6\times 10^{14} $ cm$^{-2}$, the valence band top is composed of up to three electronic bands hosting holes with different effective masses. These bands resemble those of the undoped surface, but they are heavily modified by the electric field and differ substantially from a rigid doping picture. We calculate superconducting properties by including the effects of charging of the slab and of the electric field on the structural properties, electronic structure, phonon dispersion and electron-phonon coupling. We find that at doping as large as $n=6\times 10^{14} $ cm$^{-2}$, the electron-phonon interaction is $\lambda=0.81$ and superconductivity emerges with $T_{\text{C}}\approx 29-36$K. Superconductivity is mostly supported by in-plane diamond phonon vibrations and to a lesser extent by some out-of-plane vibrations. The relevant electron-phonon scattering processes involve both intra and interband scattering so that superconductivity is multiband in nature.

Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven e.g. by electron-phonon interactions) requires to modify the electronic or vibrational properties of the material. Since intervalley scattering critically affects mobilities, a powerful approach to enhance transport performance relies on engineering the valley structure. We show here the power of this strategy using uniaxial strain to lift degeneracies and suppress scattering into entire valleys, dramatically improving performance. This is shown in detail for arsenene, where a 2% strain stops scattering into 4 of the 6 valleys, and leads to a 600% increase in mobility. The mechanism is general and can be applied to many other materials, including in particular the isostructural antimonene and blue phosphorene., Comment: 14 pages, 14 figures

Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically-thin transition-metal dichalcogenides as prototypical examples, we establish that the mechanism results from a phonon-induced out-of-phase energy shift of the different valleys, which causes inter-valley charge transfer and reduces the effectiveness of electrostatic screening, thus enhancing electron-phonon interactions. The effect is physically robust, it can play a role in many materials and phenomena, as we illustrate by discussing experimental evidence for its relevance in the occurrence of superconductivity. (short abstract due to size limitations - full abstract in the manuscript), Comment: 16 pages, 8 figures

We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field effect via planar counter-charges. In this approach, we obtain electron-phonon matrix elements in which dimensionality and doping effects are inherently accounted for, without the need for post-processing corrections. This treatment highlights some unexpected consequences, such as an increase of electron-phonon coupling with doping in transition-metal dichalcogenides.We use symmetries extensively and identify pockets of relevant electronic states to minimize the number of electron-phonon interactions to compute; the integrodifferential Boltzmann transport equation is then linearized and solved beyond the relaxation-time approximation. We apply the entire protocol to a set of much studied materials with diverse electronic and vibrational band structures: electron-doped MoS2, WS2, WSe2, phosphorene, arsenene, and hole-doped phosphorene. Among these, hole-doped phosphorene is found to have the highest mobility, with a room temperature value around 600 cm^2/(Vs). Last, we identify the factors that affect most phonon-limited mobilities, such as the number and the anisotropy of electron and hole pockets, to provide a broader understanding of the driving forces behind high mobilities in two-dimensional materials., Comment: 24 pages, 15 figures

Quantifying errors and losses due to the use of Floating-Point (FP) calculations in industrial scientific computing codes is an important part of the Verification, Validation and Uncertainty Quantification (VVUQ) process. Stochastic Arithmetic is one way to model and estimate FP losses of accuracy, which scales well to large, industrial codes. It exists in different flavors, such as CESTAC or MCA, implemented in various tools such as CADNA, Verificarlo or Verrou. These methodologies and tools are based on the idea that FP losses of accuracy can be modeled via randomness. Therefore, they share the same need to perform a statistical analysis of programs results in order to estimate the significance of the results. In this paper, we propose a framework to perform a solid statistical analysis of Stochastic Arithmetic. This framework unifies all existing definitions of the number of significant digits (CESTAC and MCA), and also proposes a new quantity of interest: the number of digits contributing to the accuracy of the results. Sound confidence intervals are provided for all estimators, both in the case of normally distributed results, and in the general case. The use of this framework is demonstrated by two case studies of large, industrial codes: Europlexus and code_aster.

We study the effect of a large obstacle on the so called residence time, i.e., the time that a particle performing a symmetric random walk in a rectangular (2D) domain needs to cross the strip. We observe a complex behavior, that is we find out that the residence time does not depend monotonically on the geometric properties of the obstacle, such as its width, length, and position. In some cases, due to the presence of the obstacle, the mean residence time is shorter with respect to the one measured for the obstacle--free strip. We explain the residence time behavior by developing a 1D analog of the 2D model where the role of the obstacle is played by two defect sites having a smaller probability to be crossed with respect to all the other regular sites. The 1D and 2D models behave similarly, but in the 1D case we are able to compute exactly the residence time finding a perfect match with the Monte Carlo simulations.

In the matching problem, each node maintains a pointer to one of its neighbor or to $null$, and a maximal matching is computed when each node points either to a neighbor that itself points to it (they are then called married), or to $null$, in which case no neighbor can also point to $null$. This paper presents a self-stabilizing distributed algorithm to compute a maximal matching in the link-register model under read/write atomicity, with complexity {$O(n\Delta^3)$} moves under the adversarial distributed daemon, where $\Delta$ is the maximum degree of the graph.

The ability to perform first-principles calculations of electronic and vibrational properties of two-dimensional heterostructures in a field-effect setup is crucial for the understanding and design of next-generation devices. We present here an implementation of density functional perturbation theories tailored for the case of two-dimensional heterostructures in field-effect configuration. Key ingredients are the inclusion of a truncated Coulomb interaction in the direction perpendicular to the slab and the possibility of simulating charging of the slab via field-effects. With this implementation we can access total energies, force and stress tensors, the vibrational properties and the electron-phonon interaction. We demonstrate the relevance of the method by studying flexural acoustic phonons and their coupling to electrons in graphene doped by field-effect. In particular, we show that while the electron-phonon coupling to those phonons can be significant in neutral graphene, it is strongly screened and negligible in doped graphene, in disagreement with other recent first-principles reports. Consequently, the gate-induced coupling with flexural acoustic modes would not be detectable in transport measurements on doped graphene., Comment: 23 pages, 11 figures

We investigate the long-wavelength dispersion of longitudinal and transverse optical phonon modes in polar two-dimensional materials, multilayers, and their heterostructures. Using analytical models and density-functional perturbation theory in a two-dimensional framework, we show that, at variance with the three-dimensional case, these modes are degenerate at the zone center but the macroscopic electric field associated with the longitudinal-optical modes gives rise to a finite slope at the zone center in their corresponding phonon dispersions. This slope increases linearly with the number of layers and it is determined solely by the Born effective charges of the material and the dielectric properties of the surrounding media. Screening from the environment can greatly reduce the slope splitting between the longitudinal and transverse optical modes and can be seen in the experimentally relevant case of boron nitride-graphene heterostructures. As the phonon momentum increases, the intrinsic screening properties of the two-dimensional material dictate the transition to a momentum-independent splitting similar to that of three-dimensional materials. These considerations are essential to understand electrical transport and optical coupling in two-dimensional systems., Comment: 8 pages, 4 figures

This work concerns the general issue of combined optimality in terms of time and space complexity. In this context, we study the problem of (exact) counting resource-limited and passively mobile nodes in the model of population protocols, in which the space complexity is crucial. The counted nodes are memory-limited anonymous devices (called agents) communicating asynchronously in pairs (according to a fairness condition). Moreover, we assume that these agents are prone to failures so that they cannot be correctly initialized. This study considers two classical fairness conditions, and for each we investigate the issue of time optimality of counting given the optimal space per agent. In the case of randomly interacting agents (probabilistic fairness), as usual, the convergence time is measured in terms of parallel time (or parallel interactions), which is defined as the number of pairwise interactions until convergence, divided by n (the number of agents). In case of weak fairness, where it is only required that every pair of agents interacts infinitely often, the convergence time is defined in terms of non-null transitions, i.e, the transitions that affect the states of the interacting agents.First, assuming probabilistic fairness, we present a "non-guessing" time optimal protocol of O(n log n) expected time given an optimal space of only one bit, and we prove the time optimality of this protocol. Then, for weak fairness, we show that a space optimal (semi-uniform) solution cannot converge faster than in $\Omega$(2^n) time (non-null transitions). This result, together with the time complexity analysis of an already known space optimal protocol, shows that it is also optimal in time (given the optimal space constrains).

We propose a self-stabilizing algorithm for computing a maximal matching in an anonymous network. The complexity is $O(n^3)$ moves with high probability, under the adversarial distributed daemon. In this algorithm, each node can determine whether one of its neighbors points to it or to another node, leading to a contradiction with the anonymous assumption. To solve this problem, we provide under the classical link-register model, a self-stabilizing algorithm that gives a unique name to a link such that this name is shared by both extremities of the link., Comment: 17 pages, 4 figures

We search for novel two-dimensional materials that can be easily exfoliated from their parent compounds. Starting from 108423 unique, experimentally known three-dimensional compounds we identify a subset of 5619 that appear layered according to robust geometric and bonding criteria. High-throughput calculations using van-der-Waals density-functional theory, validated against experimental structural data and calculated random-phase-approximation binding energies, allow to identify 1825 compounds that are either easily or potentially exfoliable, including all that are commonly exfoliated experimentally. In particular, the subset of 1036 easily exfoliable cases---layered materials held together mostly by dispersion interactions and with binding energies up to $30-35$ meV$\cdot\text{\AA}^{-2}$---provides a wealth of novel structural prototypes and simple ternary compounds, and a large portfolio to search materials for optimal properties. For the 258 compounds with up to 6 atoms per primitive cell we comprehensively explore vibrational, electronic, magnetic, and topological properties, identifying in particular 56 ferromagnetic and antiferromagnetic systems, including half-metals and half-semiconductors., Comment: 15 pages, 5 figures, supplementary material available at https://www.nature.com/articles/s41565-017-0035-5#Sec15. Data available on the Materials Cloud https://www.materialscloud.org/discover/2dstructures/dashboard/ptable

We investigate disorder relevance for the pinning of a renewal whose inter-arrival law has tail exponent $\alpha>0$ when the law of the random environment is in the domain of attraction of a stable law with parameter $\gamma \in (1,2)$. We prove that in this case, the effect of disorder is not decided by the sign of the specific heat exponent as predicted by Harris criterion but that a new criterion emerges to decide disorder relevance. More precisely we show that when $\alpha>1-\gamma^{-1}$ there is a shift of the critical point at every temperature whereas when $\alpha< 1-\gamma^{-1}$, at high temperature the quenched and annealed critical point coincide, and the critical exponents are identical., Comment: 25 Pages

We perform ab initio calculations of the coupling between electrons and small-momentum polar-optical phonons in monolayer transition metal dichalcogenides of the 2H type: MoS2, MoSe2, MoTe2, WS2, and WSe2. The so-called Fr\"ohlich interaction is fundamentally affected by the dimensionality of the system. In a plane-wave framework with periodic boundary conditions, this coupling is affected by the spurious interaction between the 2D material and its periodic images. To overcome this, we perform density functional perturbation theory calculations with a truncated Coulomb interaction in the out-of-plane direction. We show that the 2D Fr\"ohlich interaction is much stronger than assumed in previous ab initio studies. We provide analytical models depending on the effective charges and dielectric properties of the materials to interpret our ab initio calculations. Screening is shown to play a fundamental role in the phonon-momentum dependency of the polar-optical coupling, with a crossover between two regimes depending on the dielectric properties of the material relative to its environment. The Fr\"ohlich interaction is screened by the dielectric environment in the limit of small phonon momenta and sharply decreases due to stronger screening by the monolayer at finite momenta. The small-momentum regime of the ab initio Fr\"ohlich interaction is reproduced by a simple analytical model, for which we provide the necessary parameters. At larger momenta, however, direct ab initio calculations of electron-phonon interactions are necessary to capture band-specific effects. We compute and compare the carrier relaxation times associated to the scattering by both LO and A1 phonon modes. While both modes are capable of relaxing carriers on timescales under the picosecond at room temperature, their absolute and relative importance vary strongly depending on the material, the band, and the substrate., Comment: 14 pages, 8 figures

Tilt-horizontal coupling in inertial sensors limits the performance of active isolation systems such as those used in gravitational wave detectors. Inertial rotation sensors can be used to subtract the tilt component from the signal produced by horizontal inertial sensors, but such techniques are often limited by the sensor noise of the tilt measurement. A different approach is to mechanically filter the tilt transmitted to the horizontal inertial sensor, as discussed in this article. This technique does not require an auxiliary rotation sensor, and can produce a lower noise measurement. The concept investigated uses a mechanical suspension to isolate the inertial sensor from input tilt. Modeling and simulations show that such a configuration can be used to adequately attenuate the tilt transmitted to the instrument, while maintaining translation sensitivity in the frequency band of interest. The analysis is supported by experimental results showing that this approach is a viable solution to overcome the tilt problem in the field of active inertial isolation.

We consider a flip dynamics for directed (1+d)-dimensional lattice paths with length L. The model can be interpreted as a higher dimensional version of the simple exclusion process, the latter corresponding to the case d=1. We prove that the mixing time of the associated Markov chain scales like L^2\log L up to a d-dependent multiplicative constant. The key step in the proof of the upper bound is to show that the system satisfies a logarithmic Sobolev inequality on the diffusive scale L^2 for every fixed d, which we achieve by a suitable induction over the dimension together with an estimate for adjacent transpositions. The lower bound is obtained with a version of Wilson's argument for the one-dimensional case., Comment: 22 pages

We calculate the long-wavelength static screening properties of both neutral and doped graphene in the framework of density-functional theory. We use a plane-wave approach with periodic images in the third dimension and truncate the Coulomb interactions to eliminate spurious interlayer screening. We carefully address the issue of extracting two dimensional dielectric properties from simulated three-dimensional potentials. We compare this method with analytical expressions derived for two dimensional massless Dirac fermions in the random phase approximation. We evaluate the contributions of the deviation from conical bands, exchange-correlation and local-fields. For momenta smaller than twice the Fermi wavevector, the static screening of graphene within the density-functional perturbative approach agrees with the results for conical bands within random phase approximation and neglecting local fields. For larger momenta, we find that the analytical model underestimates the static dielectric function by $\approx 10%$, mainly due to the conical band approximation.

Metastability is a physical phenomenon ubiquitous in first order phase transitions. A fruitful mathematical way to approach this phenomenon is the study of rare transitions Markov chains. For Metropolis chains associated with Statistical Mechanics systems, this phenomenon has been described in an elegant way in terms of the energy landscape associated to the Hamiltonian of the system. In this paper, we provide a similar description in the general rare transitions setup. Beside their theoretical content, we believe that our results are a useful tool to approach metastability for non--Metropolis systems such as Probabilistic Cellular Automata., Comment: 39 pages, 3 figures

We study the asymptotic hitting time $\tau^{(n)}$ of a family of Markov processes $X^{(n)}$ to a target set $G^{(n)}$ when the process starts from a trap defined by very general properties. We give an explicit description of the law of $X^{(n)}$ conditioned to stay within the trap, and from this we deduce the exponential distribution of $\tau^{(n)}$. Our approach is very broad ---it does not require reversibility, the target $G$ does not need to be a rare event, and the traps and the limit on $n$ can be of very general nature--- and leads to explicit bounds on the deviations of $\tau^{(n)}$ from exponentially. We provide two non trivial examples to which our techniques directly apply., Comment: 36 pages. To appear at "The Annals of Applied Probability"

We consider a hierarchical pinning model introduced by B.Derrida, V.Hakim and J.Vannimenus which undergoes a localization/delocalization phase transition. This model depends on two parameters $b$ and $s$. We show that in the particular case where $b=s$, the disorder is weakly relevant, in the sense that at any given temperature, the quenched and the annealed critical points coincide. This is in contrast with the case where $b \neq s$.

Electron-phonon coupling in graphene is extensively modeled and simulated from first principles. We find that using an accurate model for the polarizations of the acoustic phonon modes is crucial to obtain correct numerical results. The interactions between electrons and acoustic phonon modes, the gauge field and deformation potential, are calculated at the DFT level in the framework of linear response. The zero-momentum limit of acoustic phonons is interpreted as a strain pattern, allowing the calculation of the acoustic gauge field parameter in the GW approximation. The role of electronic screening on the electron-phonon matrix elements is investigated. We then solve the Boltzmann equation semi-analytically in graphene, including both acoustic and optical phonon scattering. We show that, in the Bloch-Gr\"uneisen and equipartition regimes, the electronic transport is mainly ruled by the unscreened acoustic gauge field, while the contribution due to the deformation potential is negligible and strongly screened. By comparing with experimental data, we show that the contribution of acoustic phonons to resistivity is doping- and substrate-independent. The DFT+GW approach underestimates this contribution to resistivity by about 30 %. Above 270K, the calculated resistivity underestimates the experimental one more severely, the underestimation being larger at lower doping. We show that, beside remote phonon scattering, a possible explanation for this disagreement is the electron-electron interaction that strongly renormalizes the coupling to intrinsic optical-phonon modes. Finally, after discussing the validity of the Matthiessen rule in graphene, we derive simplified analytical solutions of the Boltzmann equation to extract the coupling to acoustic phonons, related to the strain-induced gauge field, directly from experimental data.

The strip wetting model is defined by giving a (continuous space) one dimensionnal random walk $S$ a reward $\gb$ each time it hits the strip $\R^{+} \times [0,a]$ (where $a$ is a positive parameter), which plays the role of a defect line. We show that this model exhibits a phase transition between a delocalized regime ($\gb < \gb_{c}^{a}$) and a localized one ($\gb > \gb_{c}^{a}$), where the critical point $\gb_{c}^{a} > 0$ depends on $S$ and on $a$. In this paper we give a precise pathwise description of the transition, extracting the full scaling limits of the model. Our approach is based on Markov renewal theory., Comment: 32 pages. To appear in "Stochastic Processes and their Applications"

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier interpolations to compute all electronic and vibrational properties and electron-phonon coupling matrix elements; the phonon-limited resistivity is then calculated within a Boltzmann-transport approach. An effective tight-binding model, validated against first-principles results, is also used to study the role of electron-electron interactions at the level of many-body perturbation theory. The results found are in excellent agreement with recent experimental data on graphene samples at high carrier densities and elucidate the role of the different phonon modes in limiting electron mobility. Moreover, we find that the resistivity arising from scattering with transverse acoustic phonons is 2.5 times higher than that from longitudinal acoustic phonons. Last, high-energy, optical, and zone-boundary phonons contribute as much as acoustic phonons to the intrinsic electrical resistivity even at room temperature and become dominant at higher temperatures., Comment: 7 pages 5 figures

In the last decades the problem of metastability has been attacked on rigorous grounds via many different approaches and techniques which are briefly reviewed in this paper. It is then useful to understand connections between different point of views. In view of this we consider irreducible, aperiodic and reversible Markov chains with exponentially small transition probabilities in the framework of Metropolis dynamics. We compare two different cycle decompositions and prove their equivalence.

In this article, we consider the continuous analog of the celebrated Mandelbrot star equation with infinitely divisible weights. Mandelbrot introduced this equation to characterize the law of multiplicative cascades. We show existence and uniqueness of measures satisfying the aforementioned continuous equation. We obtain an explicit characterization of the structure of these measures, which reflects the constraints imposed by the continuous setting. In particular, we show that the continuous equation enjoys some specific properties that do not appear in the discrete star equation. To that purpose, we define a L\'{e}vy multiplicative chaos that generalizes the already existing constructions., Comment: Published in at http://dx.doi.org/10.1214/12-AOP810 the Annals of Probability (http://www.imstat.org/aop/) by the Institute of Mathematical Statistics (http://www.imstat.org)

In this paper, we investigate random walk based token circulation in dynamic environments subject to failures. We describe hypotheses on the dynamic environment that allow random walks to meet the important property that the token visits any node infinitely often. The randomness of this scheme allows it to work on any topology, and require no adaptation after a topological change, which is a desirable property for applications to dynamic systems. For random walks to be a traversal scheme and to answer the concurrence problem, one needs to guarantee that exactly one token circulates in the system. In the presence of transient failures, configurations with multiple tokens or with no token can occur. The meeting property of random walks solves the cases with multiple tokens. The reloading wave mechanism we propose, together with timeouts, allows to detect and solve cases with no token. This traversal scheme is self-stabilizing, and universal, meaning that it needs no assumption on the system topology. We describe conditions on the dynamicity (with a local detection criterion) under which the algorithm is tolerant to dynamic reconfigurations. We conclude by a study on the time between two visits of the token to a node, which we use to tune the parameters of the reloading wave mechanism according to some system characteristics.

In this paper we consider heavy tailed Markov renewal processes and we prove that, suitably renormalised, they converge in law towards the $\ga$-stable regenerative set. We then apply these results to the strip wetting model which is a random walk $S$ constrained above a wall and rewarded or penalized when it hits the strip $[0,\infty) \times [0,a]$ where $a$ is a given positive number. The convergence result that we establish allows to characterize the scaling limit of this process at criticality.

We consider a random walk $S$ in the domain of attraction of a standard normal law $Z$, \textit{ie} there exists a positive sequence $a_n$ such that $S_n/a_n$ converges in law towards $Z$. The main result of this note is that the rescaled process $(S_{\lfloor nt \rfloor}/a_n, t \geq 0)$ conditioned to stay non-negative, to start and to come back \textit{near the origin} converges in law towards the normalized brownian excursion.

We propose an algorithm that builds and maintains clusters over a network subject to mobility. This algorithm is fully decentralized and makes all the different clusters grow concurrently. The algorithm uses circulating tokens that collect data and move according to a random walk traversal scheme. Their task consists in (i) creating a cluster with the nodes it discovers and (ii) managing the cluster expansion; all decisions affecting the cluster are taken only by a node that owns the token. The size of each cluster is maintained higher than $m$ nodes ($m$ is a parameter of the algorithm). The obtained clustering is locally optimal in the sense that, with only a local view of each clusters, it computes the largest possible number of clusters (\emph{ie} the sizes of the clusters are as close to $m$ as possible). This algorithm is designed as a decentralized control algorithm for large scale networks and is mobility-adaptive: after a series of topological changes, the algorithm converges to a clustering. This recomputation only affects nodes in clusters in which topological changes happened, and in adjacent clusters.

Random walk based distributed algorithms make use of a token that circulates in the system according to a random walk scheme to achieve their goal. To study their efficiency and compare it to one of the deterministic solutions, one is led to compute certain quantities, namely the hitting times and the cover time. Until now, only bounds on these quantities were defined. First, this paper presents two generalizations of the notions of hitting and cover times to weighted graphs. Indeed, the properties of random walks on symmetrically weighted graphs provide interesting results on random walk based distributed algorithms, such as local load balancing. Both of these generalization are proposed to precisely represent the behaviour of these algorithms, and to take into account what the weights represent. Then, we propose an algorithm to compute the n^2 hitting times on a weighted graph of n vertices, which we improve to obtain a O(n^3) complexity. This complexity is the lowest up to now. This algorithm computes both of the generalizations that we propose for the hitting times on a weighted graph. Finally, we provide the first algorithm to compute the cover time (in both senses) of a graph. We improve it to achieve a complexity of O(n^3 2^n). The algorithms that we present are all robust to a topological change in a limited number of edges. This property allows us to use them on dynamic graphs., Comment: 18 pages