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The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament formation and their influence on device resistance remain incompletely understood. In this work we study FRS in binary oxides based memristors by investigating the dynamics of oxygen vacancies (OV) on a two dimensional lattice and their role in forming low-resistance paths that facilitate the transition between high and low global resistance states. We reveal that the mere formation of an OV percolation path is insufficient to induce a transition to a low-resistance state. Instead, an OV concentration exceeding a critical threshold across all sites in the filament is required to generate a low-resistivity conducting path. Furthermore, we simulate the impact of static defects -which block OV migration and would correspond to voids in real porous samples-, on filament formation. We show that there is a range of defect density values where OV percolate through the sample, leading to the formation of OV filaments, but conductive paths remain absent. Additionally, a small concentration of defects can reduce the final value of the low-resistance state, thereby increasing the ON-OFF ratio. These findings provide valuable insights into optimizing defective nanomaterials with memristive properties, which are crucial for advancing in-memory and neuromorphic computing technologies., Comment: 8 figures, 28 pages in preprint form

Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO$_2$/Pt devices fabricated on silicon by a simple and effective low-toxicity chemical solution method. Depending on the fabrication conditions, either dielectric or ferroelectric devices are obtained, each one presenting a distinct memristive response. The devices are forming-free and can sustain ferroelectric switching and memristive behavior simultaneously. Aided by numerical simulations, we describe this behavior as a competition of different mechanisms, including the effect of the ferroelectric polarization on Schottky interfaces and oxygen vacancy electromigration. Finally, we propose a simple learning algorithm for time-series recognition, designed to take advantage of the resistance relaxations present in the case of the ferroelectric devices., Comment: 10 pages, 4 figures

Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices, Comment: 15 pages, 10 figures

Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices., Comment: 23 pages in preprint form, 5 figures

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices., Comment: 9 pages, 7 figures

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-\delta}$ (LSMCO, 0 $\leq$ $\delta$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effect C$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology., Comment: 14 pages, 5 figures, to appear in Appl. Phys. Lett

We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active RS oxides adds functionalities in relation to single-oxide devices. We understand that these multilevel devices are interesting and promising as their fabrication procedure is rather simple and they are fully compatible with standard Si-based electronics., Comment: 15 pages, 4 figures. To appear in Applied Physics Letters

We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs., Comment: Accepted for publication in the IEEE Transactions on CAS II

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles., Comment: 10 pages, 4 figures. To be published in Applied Physics Letters

We study non-equilibrium electron transport through a quantum impurity coupled to metallic leads using the equation of motion technique at finite temperature T. Assuming that the interactions are taking place solely in the impurity and focusing in the infinite Hubbard limit, we compute the out of equilibrium density of states and the differential conductance G_2(T,V) to test several scaling laws. We find that G_2(T,V)/G_2(T,0) is a universal function of both eV/T_K and T/T_K, being T_K the Kondo temperature. The effect of an in plane magnetic field on the splitting of the zero bias anomaly in the differential conductance is also analyzed. For a Zeeman splitting \Delta, the computed differential conductance peak splitting depends only on \Delta/T_K, and for large fields approaches the value of 2\Delta . Besides the traditional two leads setup, we also consider other configurations that mimics recent experiments, namely, an impurity embedded in a mesoscopic wire and the presence of a third weakly coupled lead. In these cases, a double peak structure of the Kondo resonance is clearly obtained in the differential conductance while the amplitude of the highest peak is shown to decrease as \ln(eV/T_K). Several features of these results are in qualitative agreement with recent experimental observations reported on quantum dots., Comment: 9 pages, 7 figures

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces., Comment: 14 pages, 3 figures, to be published in Jour. of Appl. Phys

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model., Comment: Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figures

We investigate the spin accumulation effect in eccentric semiconductor multichannel rings with Rashba spin-orbit interaction and threaded by a magnetic flux. Due to the finite eccentricity, the spin polarization induced at the borders of the sample is anisotropic and exhibits different patterns and intensities at specific angular directions. This effect, reminiscent of the spin polarization drift induced by the application of an in plane electric field, could be used to manipulate and functionalize the spin polarization in electronic nanorings., Comment: 14 pages preprint form,5 figures

We investigate the behavior of the dc voltage drop in a periodically driven double barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four terminal resistance $R_{4t}$ measured with the probes located outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result, valid beyond the adiabatic pumping regime, can be taken as an indication of the universal character of $R_{4t}$ as a measure of the resistive properties of a sample, irrespectively of the mechanism used to induce the transport., Comment: 4 pages, 3 figures

Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures., Comment: 4 pages, 2 figures

We investigate the dc response of a 1D disordered ring coupled to a reservoir and driven by a magnetic flux with a linear dependence on time. We identify two regimes: (i) A localized or large length L regime, characterized by a dc conductance, g_{dc}, whose probability distribution P(g_{dc}) is identical to the one exhibited by a 1D wire of the same length L and disorder strength placed in a Landauer setup. (ii) A "multifloquet" regime for small L and weak coupling to the reservoir, which exhibits large currents and conductances that can be g_{dc} > 1, in spite of the fact that the ring contains a single electronic transmission channel. The crossover length between the multifloquet to the single channel transport regime, L_c, is controlled by the coupling to the reservoir., Comment: 5 pages, 4 figures

We calculate the distribution of the conductance G in a one-dimensional disordered wire at finite temperature T and bias voltage V in a independent-electron picture and assuming full coherent transport. At high enough temperature and bias voltage, where several resonances of the system contribute to the conductance, the distribution P(G(T,V)) can be represented with good accuracy by autoconvolutions of the distribution of the conductance at zero temperature and zero bias voltage. The number of convolutions depends on T and V. In the regime of very low T and V, where only one resonance is relevant to G(T,V), the conductance distribution is analyzed by a resonant tunneling conductance model. Strong effects of finite T and V on the conductance distribution are observed and well described by our theoretical analysis, as we verify by performing a number of numerical simulations of a one-dimensional disordered wire at different temperatures, voltages, and lengths of the wire. Analytical estimates for the first moments of P(G(T,V)) at high temperature and bias voltage are also provided., Comment: 9 pages, 7 figures, Submitted to PRB

We show that a finite magnetic flux threading a multichannel semiconductor ring induces spin accumulation at the borders of the sample when the Rashba spin-orbit interaction is taken into account even in the absence of external electric fields., Comment: 5 pages, 4 figures

We study the edge states in a two dimensional electron gas with a transverse magnetic field and Rashba spin-orbit coupling. In the bulk, the interplay between the external field perpendicular to the gas plane and the spin-orbit coupling leads to two branches of states that, within the same energy window, have different cyclotron radii. For the edge states, surface reflection generates hybrid states with the two cyclotron radii. We analyze the spectrum and spin structure of these states and present a semiclassical picture of them., Comment: 7 pages, 8 figures

Here we report on several anomalies in quantum transport at the band center of a bipartite lattice with vacancies that are surely due to its chiral symmetry, namely: no weak localization effect shows up, and, when leads have a single channel the transmission is either one or zero. We propose that these are a consequence of both the chiral symmetry and the large number of states at the band center. The probability amplitude associated to the eigenstate that gives unit transmission ressembles a classical trajectory both with or without vacancies. The large number of states allows to build up trajectories that elude the blocking vacancies explaining the absence of weak localization., Comment: 5 pages, 5 figures

Finite size effects in the localization properties of disordered quantum wires are analyzed through conductance calculations. Disorder is induced by introducing vacancies at random positions in the wire and thus preserving the chiral symmetry. For quasi one-dimensional geometries and low concentration of vacancies, an exponential decay of the mean conductance with the wire length is obtained even at the center of the energy band. For wide wires, finite size effects cause the conductance to decay following a non-pure exponential law. We propose an analytical formula for the mean conductance that reproduces accurately the numerical data for both geometries. However, when the concentration of vacancies increases above a critical value, a transition towards the suppression of the conductance occurs. This is a signature of the presence of ultra-localized states trapped in finite regions of the sample., Comment: 5 figures, revtex4

The effect of disorder on confined metallic cavities with an Aharonov-Bohm flux line is addressed. We find that, even deep in the diffusive regime, large values of persistent currents may arise for a wide variety of geometries. We present numerical results supporting an anomalous scaling law of the average typical current $< I_{typ}>$ with the strength of disorder $w$, $< I_{typ}> \sim w^{- \gamma}$ with $\gamma < 2$. This is contrasted with previously reported results obtained for cylindrical samples where a scaling $< I_{typ}> \sim w^{-2}$ has been found. Possible links to, up to date, unexplained experimental data are finally discussed., Comment: 5 pages, 4 figures

New aspects of spectral fluctuations of (quantum) chaotic and diffusive systems are considered, namely autocorrelations of the spacing between consecutive levels or spacing autocovariances. They can be viewed as a discretized two point correlation function. Their behavior results from two different contributions. One corresponds to (universal) random matrix eigenvalue fluctuations, the other to diffusive or chaotic characteristics of the corresponding classical motion. A closed formula expressing spacing autocovariances in terms of classical dynamical zeta functions, including the Perron-Frobenius operator, is derived. It leads to a simple interpretation in terms of classical resonances. The theory is applied to zeros of the Riemann zeta function. A striking correspondence between the associated classical dynamical zeta functions and the Riemann zeta itself is found. This induces a resurgence phenomenon where the lowest Riemann zeros appear replicated an infinite number of times as resonances and sub-resonances in the spacing autocovariances. The theoretical results are confirmed by existing ``data''. The present work further extends the already well known semiclassical interpretation of properties of Riemann zeros., Comment: 28 pages, 6 figures, 1 table, To appear in the Gutzwiller Festschrift, a special Issue of Foundations of Physics

A quasi-one-dimensional quantum dot containing two interacting electrons is analyzed in search of signatures of chaos. The two-electron energy spectrum is obtained by diagonalization of the Hamiltonian including the exact Coulomb interaction. We find that the level-spacing fluctuations follow closely a Wigner-Dyson distribution, which indicates the emergence of quantum signatures of chaos due to the Coulomb interaction in an otherwise non-chaotic system. In general, the Poincar\'e maps of a classical analog of this quantum mechanical problem can exhibit a mixed classical dynamics. However, for the range of energies involved in the present system, the dynamics is strongly chaotic, aside from small regular regions. The system we study models a realistic semiconductor nanostructure, with electronic parameters typical of gallium arsenide., Comment: 4 pages, 3ps figures

Confinement and surface roughness (SR) effects on the magnitude of the persistent current are analized for ballistic bidimensional metallic samples. Depending on the particular geometry, localized border states can show up at half filling. These border states contribute coherently to the persistent current and its magnitude is enhanced with respect to their value in the absent of confinement. A linear scaling of the typical current $I_{typ}$ with the number of conduction channels M is obtained. This result is robust with respect to changes in the relevant lengths of the samples and to the SR. Possible links of our results to experiments are also discussed., Comment: 5 pages, 6 figures

We consider a bidimensional discrete annular cavity with surface roughness (SR) threaded by a magnetic flux. In the ballistic regime and at half filling, localized border-states show up. These border states contribute coherentely to the persistent current and the magnitude of the typical current $I_{typ}$ is enhaced with respect to their value in the absence of confinement. This result is robust with respect to changes in the relevant lengths of the sample., Comment: 6 pages, 3 ps figures included

The spectrum of eigenenergies of a quantum integrable system whose hamiltonian depends on a single parameter shows degeneracies (crossings) when the parameter varies. We derive a semiclassical expression for the density of crossings in the plane energy-parameter, that is the number of crossings per unit of energy and unit of parameter, in terms of classical periodic orbits. We compare the results of the semiclassical formula with exact quantum calculations for two specific quantum integrable billiards., Comment: 25 pages, 7 figures . Submitted to PRE

In the present article we perform analytical and numerical calculations related to persistent currents in 2D isolated mesoscopic annular cavities threaded by a magnetic flux. The system considered has a high number of open channels and therefore the single particle spectrum exhibits many level crossings as the flux varies. We determine the effect of the distribution of level crossings in the typical persistent current., Comment: 23 pages, including 6 figures

We consider a single particle spectrum as given by the eigenvalues of the Wigner-Dyson ensembles of random matrices, and fill consecutive single particle levels with n fermions. Assuming that the fermions are non-interacting, we show that the distribution of the total energy is Gaussian and its variance grows as n^2 log n in the large-n limit. Next to leading order corrections are computed. Some related quantities are discussed, in particular the nearest neighbor spacing autocorrelation function. Canonical and gran canonical approaches are considered and compared in detail. A semiclassical formula describing, as a function of n, a non-universal behavior of the variance of the total energy starting at a critical number of particles is also obtained. It is illustrated with the particular case of single particle energies given by the imaginary part of the zeros of the Riemann zeta function on the critical line., Comment: 28 pages in Latex format, 5 figures, submitted for publication to Physica D

This paper is concerned with the study of one-body dissipation effects in idealized models resembling a nucleus. In particular, we study the quantum mechanics of a free particle that collides elastically with the slowly moving walls of a Bunimovich stadium billiard. Our results are twofold. First, we develop a method to solve in a simple way the quantum mechanical evolution of planar billiards with moving walls. The formalism is based on the {\it scaling method} \cite{ver} which enables the resolution of the problem in terms of quantities defined over the boundary of the billiard. The second result is related to the quantum aspects of dissipation in systems with complex spectra. We conclude that in a slowly varying evolution the energy is transferred from the boundary to the particle through Landau$-$Zener transitions., Comment: 24 pages (including 7 postcript figures), Revtex. Submitted to PRE

We study the decay law of the Sinai Well in $D$ dimensions and relate the behavior of the decay law to internal distributions that characterize the dynamics of the system. We show that the long time tail of the decay is algebraic ($1/t$), irrespective of the dimension $D$., Comment: 14 pages, Figures available under request. Revtex. Submitted to Phys. Rev. E.,e-mail: majo@dfuba.df.uba.ar