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High-fidelity quantum state transfer and remote entanglement between superconducting fixed-frequency qubits have not yet been realized. In this study, we propose an alternative remote cross-resonance gate. Considering multiple modes of a superconducting coaxial cable connecting qubits, we must find conditions under which the cross-resonance gate operates with a certain accuracy even in the presence of qubit frequency shifts due to manufacturing errors. For 0.25- and 0.5-m cables, remote cross-resonance gates with a concurrence of $>99.9\%$ in entanglement generation are obtained even with $\pm$10-MHz frequency shifts. For a 1-m cable with a narrow mode spacing, a concurrence of 99.5\% is achieved by reducing the coupling between the qubits and cable. The optimized echoed raised-cosine pulse duration is 150--400 ns, which is similar to the operation time of cross-resonance gates between neighboring qubits on a chip. The dissipation through the cable modes does not considerably affect the obtained results. Such high-precision quantum interconnects pave the way not only for scaling up quantum computer systems but also for nonlocal connections on a chip.

The quantum transduction between microwave and optical photons is essential for realizing scalable quantum computers with superconducting qubits. Due to the large frequency difference between microwave and optical ranges, the transduction needs to be done via intermediate bosonic modes or nonlinear processes. So far, the transduction efficiency $\eta$ via the magneto-optic Faraday effect (i.e., the light-magnon interaction) in the ferromagnet YIG has been demonstrated to be small as $\eta\sim 10^{-8} \mathrm{-} 10^{-15}$ due to the weak magneto-optic coupling. Here, we take advantage of the fact that three-dimensional topological insulator thin films exhibit a topological Faraday effect that is independent of the sample thickness in the terahertz regime. This leads to a large Faraday rotation angle and therefore enhanced light-magnon interaction in the thin film limit. We show theoretically that the transduction efficiency between microwave and terahertz photons can be greatly improved to $\eta\sim10^{-4}$ by utilizing the heterostructures consisting of topological insulator thin films such as Bi$_2$Se$_3$ and ferromagnetic insulator thin films such as YIG., Comment: 11 pages, 7 figures. To appear in Phys. Rev. Applied

We used density functional theory to investigate the lateral heteromonolayers of WTe2 and MoTe2. We confirmed that topologically nontrivial and trivial phases are energetically favored for the WTe2 and MoTe2 monolayers, taken out of bulk Td-WTe2 and 2H-MoTe2, respectively. We considered heteromonolayers consisting of these stable building blocks. In the Td-WTe2 and 2H-MoTe2 heteromonolayers with the interfaces oriented perpendicular to the dimer chains of W atoms in Td-WTe2 (y direction), two pairs of helical (quantum spin Hall [QSH]) states, one at each interface, connect the valence and conduction bands. The strain induced by the large lattice mismatch of the two materials in the y direction widens the band gap of the QSH insulator of the Td-WTe2 monolayer and is essential for electronic applications. Furthermore, one-dimensional channels embedded in the layer can help avoid chemical degradation from the edges and facilitate the densification of conducting channels. For the heteromonolayer with interfaces in the x direction, the difference in atomic structure between the two interfaces due to low symmetry creates an energy difference between two helical states and a potential gradient in the wide band gap 2H-MoTe2 region, resulting in various interface localized bands.

We study theoretically the electronic structure of three-dimensional (3D) higher-order topological insulators in the presence of step edges. We numerically find that a 1D conducting state with a helical spin structure, which also has a linear dispersion near the zero energy, emerges at a step edge and on the opposite surface of the step edge. We also find that the 1D helical conducting state on the opposite surface of a step edge emerges when the electron hopping in the direction perpendicular to the step is weak. In other words, the existence of the 1D helical conducting state on the opposite surface of a step edge can be understood by considering an addition of two different-sized independent blocks of 3D higher-order topological insulators. On the other hand, when the electron hopping in the direction perpendicular to the step is strong, the location of the emergent 1D helical conducting state moves from the opposite surface of a step edge to the dip ($270^{\circ}$ edge) just below the step edge. In this case, the existence at the dip below the step edge can be understood by assigning each surface with a sign ($+$ or $-$) of the mass of the surface Dirac fermions. These two physical pictures are connected continuously without the bulk bandgap closing. Our finding paves the way for on-demand creation of 1D helical conducting states from 3D higher-order topological insulators employing experimental processes commonly used in thin-film devices, which could lead to, e.g., a realization of high-density Majorana qubits., Comment: 15 pages, 13 figures

Monolayer WTe2 stripes are quantum spin Hall (QSH) insulators. Density functional theory was used for investigating the electronic properties of the stripes and steps in bilayer Td-WTe2. For the stripes oriented along the dimer chains of W atoms (x direction), the hybridization between the two layers suppresses the QSH states. However, the QSH nature can be recovered by forming a step, depending on the atomic structure of the step. Conversely, the stripes and steps along the y direction maintain the QSH states. These findings can expand the application range of the QSH states in WTe2.

We report on the fabrication of Josephson junction devices with weak links utilizing the Weyl and higher-order topological semimetal $\text{WTe}_2$. We show that $\text{WTe}_2\text{/Pd}$ contact annealed at a low temperature of 80{\deg}C did not exhibit superconducting properties because neither $\text{WTe}_2$ nor Pd are superconductors in the ground state. Upon 180{\deg}C annealing, spontaneous formation of superconducting $\text{PdTe}$ due to Pd diffusion enabled us to obtain the interface between $\text{WTe}_2$ and superconductor suitable for the Josephson junction. This result is a facile technique to make a Josephson junction and induce Cooper pairs into topological telluride semimetals.

Graphene nanoribbons (GNRs) synthesized using a bottom-up technique potentially enable future electronic devices owing to the tunable electronic structures depending on the well-defined width and edge geometry. For instance, armchair-edged GNRs (AGNRs) exhibit width-dependent bandgaps. However, the bandgaps of AGNRs synthesized experimentally thus far are relatively large, well above 1 eV. Such a large bandgap may deteriorate device performances due to large Schottky barriers and carrier effective masses. We describe the bottom-up synthesis of AGNRs with a smaller bandgap using dibromobenzene-based precursors. Two types of AGNRs with different widths of 17 and 13 carbon atoms were synthesized on Au(111), and their atomic and electronic structures were investigated by scanning probe microscopy and spectroscopy. We reveal that the 17-AGNRs has the smallest bandgap as well as the smallest electron/hole effective mass among bottom-up AGNRs reported thus far. The successful synthesis of 17-AGNRs is a significant step toward the development of GNR-based electronic devices.

Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in GeS at room temperature. Moreover, determination of the polarization dependent characteristics of the PL and absorption reveals an anisotropic optical transition near the band edge of GeS, which is also supported by the density functional theory calculations. This anisotropic layered GeS presents the opportunities for the discovery of new physical phenomena and will find applications that exploit its anisotropic properties.