Search

The structure and properties of water or ice are of great interest to researchers due to their importance in the biological, cryopreservation and environmental fields. Hexagonal ice (Ih) is a common ice phase in nature and has been extensively studied; however, microstructural investigations at the atomic or molecular scale are still lacking. In this paper, the fine structure of quasi-2-dimensional ice Ih films was directly examined using cryogenic transmission electron microscopy. Two types of thin Ih films were observed: perfect single crystals growing along the [0001] direction and crystals with stacking faults, including both basal (BSF) and prismatic (PSF) ones, along the orientation of [11-20]; these results were further confirmed by theoretical calculations. Importantly, for the first time, the stacking faults in ice Ih were directly visualized and resolved. In light of the extension behavior of the chair conformation composed of the water molecules, we elucidated the formation mechanism of BSF in Ih, namely, the Ic phase. This study not only determined the structural characteristics of ice structure at the molecular scale but also provided important concepts for researchers to more fully understand the growth kinetics of ice crystals at the atomic scale.

Sample thickness is an important parameter in transmission electron microscopy (TEM) imaging, for interpreting image contrast and understanding the relationship between properties and microstructure. In this study, we introduce a method for determining thickness in scanning transmission electron microscopy (STEM) mode based on scanning moir\'e fringe (SMF). Sample thickness can be determined in situ in the medium magnification using focal-series SMF imaging, with beam damage and contamination avoided to a large extent. This method provides a fast and convenient way for determining thickness in TEM imaging, which is particularly useful for beam-sensitive materials such as Metal-Organic Frameworks., Comment: 11 pages, 4 figures

Writing, erasing and computing are three fundamental operations required by any working electronic devices. Magnetic skyrmions could be basic bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size and high mobility. However, creating, deleting and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is highly desirable. Here, by engineering chiral magnet Co$_8$Zn$_{10}$Mn$_2$ into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low a current density about $10^{10}$ A/m$^2$ at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices., Comment: 16 pages

Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of ~0.9 at 323 K and ~1.6 at 723 K, making the average ZT much higher for better performance. The large improvement at room temperature is significant considering that such a ZT value is comparable to the best ZT at this temperature in n-type Bi2Te3. The enhancement was mainly from the improved electrical mobility and multi-scale phonon scattering, particularly from the well-dispersed bismuth nano-precipitates in the porous structure. We further extend this approach to other thermoelectric materials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb and Hf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements, further advancing thermoelectric materials for applications.