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Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar ion source was applied to achieve an ultrathin interfacial layer. The simultaneous surface activation and slow deposition of the SiOx binder layer enabled precise control over layer thickness (2.5-5.3 nm) and formation of an amorphous heterogeneous nanostructure comprising a SiOx region between two inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved a TBR of 8.3 m2-W/GW, a record low for direct-bonded GaN/diamond interface. A remarkable feature is that the TBR is extremely sensitive to the interfacial thickness; rapidly increasing to 34 m2-K/GW on doubling the thickness to 5.3 nm. Theoretical analysis revealed the origin of this increase: a diamond/SiOx interdiffusion layer extend the vibrational frequency, far-exceeding that of crystalline diamond, which increases the lattice vibrational mismatch and suppresses phonon transmission.

Recently, massive efforts have been done on controlling thermal transport via coherent phonons in the various periodic nanostructures. However, the intrinsic lattice difference between the constituent materials inevitably generates the disorder at the interfaces, thus limiting the opportunity of directly observing the coherent phonon transport. Here, we investigate the controllability and visualization of the coherent phonon transport in a periodic MoS2/MoSe2 arrayed heterostructure with minimum lattice mismatching using non-equilibrium molecular dynamics simulation. It is found that the coherent phonon transport can be destroyed and rebuilt through adjusting the density of MoSe2 nanodot arrays. The phonon localization induced by the destruction of correlation is visualized based on the spatial energy distribution and anharmonic analysis. Furthermore, the eigen vector diagrams provide a distinct visualization of the localized phonon modes. Besides, the correlation of phonon can be rebuilt by reducing the period length, which is verified by the enhanced group velocities extracted from phonon dispersion curves. Interestingly, the crossover from incoherent to coherent phonon transport is directly observed by the spatial energy distributions and the spectral phonon transmission coefficients. Finally, the size and temperature dependence of thermal conductivity are also discussed. This study of the phonon coherence and its visualizing manipulation on thermal conductivity will be beneficial to fine heat control and management in the real applications., Comment: 21 Pages, 4 Figures

Aiming at developing high thermal conductivity copper/diamond composite, an unconventional approach applying self-assembled monolayer (SAM) prior to the high-temperature sintering of copper/diamond composite was utilized to enhance the thermal boundary conductance (TBC) between copper and diamond. The enhancement was first systematically confirmed on a model interface system by detailed SAM morphology characterization and TBC measurements. TBC significantly depends on the SAM coverage and ordering, and the formation of high-quality SAM promoted the TBC to 73 MW/m^2-K from 27 MW/m^2-K, the value without SAM. With the help of molecular dynamics simulations, the TBC enhancement was identified to be determined by the number of SAM bridges and the overlap of vibrational density of states. The diamond particles of 210 {\micro\metre} in size were simultaneously functionalized by SAM with the condition giving the highest TBC in the model system and sintered together with the copper to fabricate isotropic copper/diamond composite of 50% volume fraction. The measured thermal conductivity marked 711 W/m-K at room temperature, the highest value among the ones with similar diamond-particles volume fraction and size. This work demonstrates a novel strategy to enhance the thermal conductivity of composite materials by SAM functionalization.

In this work, we report a new stop-band formation mechanism by performing the atomistic Green's function calculation and the wave-packet molecular dynamics simulation for a system with germanium-nanoparticle array embedded in a crystalline silicon matrix. When only a single nanoparticle is embedded, the local resonance, induced through destructive interference between two different phonon wave paths, gives rise to several sharp and significant transmittance dips. On the other hand, when the number of embedded nanoparticles further increases to ten, a stop band with complete phonon reflection is formed due to the two-path resonance Bragg-like phonon interference. The wave packet simulations further uncover that the stop band originates from the collective phonon resonances at the embedded nanoparticles. Compared with the traditional stop-band formation mechanism that is the single-path Bragg reflection, the resonance mechanism has a significant advantage in not requiring the strict periodicity in the embedded nanoparticles array. We also demonstrate that the stop band can significantly suppress thermal conductance in the low-frequency regime. Our work provides a robust, scalable. and easily modulable stop-band formation mechanism. which opens a new degree of freedom for phononics-related heat control.

Modifying phonon thermal conductivity in nanomaterials is important not only for fundamental research but also for practical applications. However, the experiments on tailoring the thermal conductivity in nanoscale, especially in two-dimensional materials, are rare due to technical challenges. In this work, we demonstrate in-situ thermal conduction measurement of MoS2 and find that its thermal conductivity can be continuously tuned to a required value from crystalline to amorphous limits. The reduction of thermal conductivity is understood from phonon-defects scatterings that decrease the phonon transmission coefficient. Beyond a threshold, a sharp drop in thermal conductivity is observed, which is believed to be a crystalline-amorphous transition. Our method and results provide guidance for potential applications in thermoelectrics, photoelectronics, and energy harvesting where thermal management is critical with further integration and miniaturization., Comment: 16 pages, 4 figures, Published in Nanoscale, 2018,10, 2727-2734 See this page http://pubs.rsc.org/en/content/articlepdf/2018/nr/c7nr07522g

The low rectification ratio limits the application of thermal rectifiers. In this paper, it is found that a series circuit of thermal rectifiers in asymmetric graphene/graphene phononic crystal (GPnC) structures can improve rectification significantly. The simulations by using non-equilibrium molecular dynamics (NEMD) are performed. Moreover, the size effect on thermal rectification is also studied and discussed.

By using non-equilibrium molecular dynamics simulations(NEMD), the modulation on temperature dependence of thermal conductivity of graphene phononic crystals (GPnCs) are investigated. It is found that the temperature dependence of thermal conductivity of GPnCs follows $T^{-\alpha}$ behavior. The power exponents ($\alpha$) can be efficiently tuned by changing the characteristic size of GPnCs. The phonon participation ratio spectra and dispersion relation reveal that the long-range phonon modes are more affected in GPnCs with larger size of holes ($L_0$). Our results suggest that constructing GPnCs is an effective method to manipulate the temperature dependence of thermal conductivity of graphene, which would be beneficial for developing GPnCs-based thermal management and signal processing devices., Comment: 16pages,4figures

In this letter, we investigate numerically (by non-equilibrium molecular dynamics) and analytically the thermal conductivity of nanoscale graphene disks (NGDs), and discussed the possibility to realize FGM with only one material, NGDs. We found that the NGD has a graded thermal conductivity and can be used as FGM in a large temperature range. Moreover, we show the dependent of NGDs' thermal conductivity on radius and temperature. Our study may inspire experimentalists to develop NGD based FGMs and help heat removal of hot spots on chips by graphene.