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Light-induced ion demixing in mixed-halide perovskites is simulated numerically using the phenomenological Cahn-Hilliard equation. In the model we consider the energy of local elastic deformation as well as the contribution of free carriers, assuming both the polaron and the bandgap-fluctuation models. The simulation shows that elastic deformation suppresses the demixing while free carriers promote it, however both effects lead to different ion distributions. The free-carrier-induced demixing appears only for larger starting random fluctuations of the ion concentration., Comment: 11 pages, 10 figures

Frustrated antiferromagnets offer a captivating platform to study the intricate relationship of magnetic interactions, geometric constraints, and emergent phenomena. By controlling spin orientations, these materials can be tailored for applications in spintronics and quantum information processing. The research focuses on the interplay of magnetic and exchange anisotropy effects in artificial heterostructures based on a canonical frustrated antiferromagnet, UO2. The potential to manipulate the spin directions in this material and switch between distinct antiferromagnetic states is investigated using substrate-induced strain. The phenomenon is probed using exchange bias (EB) effects in stoichiometric UO2/Fe3O4 bilayers. By employing many-body first-principles calculations magnetic configurations in the UO2 layers are identified. Even a minor tetragonal distortion triggers a transition between antiferromagnetic states of different symmetries, driven by a robust alteration of single-ion anisotropy due to the distortion. Consequently, this change influences the arrangement of magnetic moments at the UO2/Fe3O4 interface, affecting the magnitude of exchange bias. The findings showcase how epitaxial strain can effectively manipulate the antiferromagnetic states in frustrated antiferromagnets by controlling single-site anisotropy.

While geometrically frustrated quantum magnets are known for a variety of exotic spin states that are of great interests of understanding emergent phenomena as well as enabling revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit that relies on moving charge carriers. The grand challenge of converting fluctuations and excitations of frustrated moments into electronic responses is finding ways to introduce charge carriers that interact with the localized spins without destroying the spin states. Here, we show that, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of the spin ice rule in insulating Dy2Ti2O7 can lead to a charge response in the Bi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance. These results demonstrate a novel and feasible interfacial approach for electronically probing exotic spin states in insulating magnets, laying out a blueprint for the metallization of frustrated quantum magnets.

We report an experimental investigation of the two-dimensional ${J}_{\rm eff}$ = 1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO$_3$)$_1$, (SrTiO$_3$)$_m$] ($m$ = 1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the $m$ = 2 and $m$ = 3 samples than the $m$ = 1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO$_3$ layer enhances the effective electron-electron correlation and strengthens the Mott phase. The significant reduction of the Neel temperature from 150 K for $m$ = 1 to 40 K for $m$ = 2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO$_3$ layer number $m$, for maintaining canting-induced weak ferromagnetism. The nearly unaltered transition temperature between the $m$ = 2 and the $m$ = 3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling., Comment: 4 figures

Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films., Comment: 7 pages, 4 figures

By using a combination of heteroepitaxial growth, structure refinement based on synchrotron x-ray diffraction and first-principles calculations, we show that the symmetry-protected Dirac line nodes in the topological semimetallic perovskite SrIrO3 can be lifted simply by applying epitaxial constraints. In particular, the Dirac gap opens without breaking the Pbnm mirror symmetry. In virtue of a symmetry-breaking analysis, we demonstrate that the original symmetry protection is related to the n-glide operation, which can be selectively broken by different heteroepitaxial structures. This symmetry protection renders the nodal line a nonsymmorphic Dirac semimetallic state. The results highlight the vital role of crystal symmetry in spin-orbit-coupled correlated oxides and provide a foundation for experimental realization of topological insulators in iridate-based heterostructures., Comment: 7 pages, 7 figures

We investigated the electronic properties of epitaxially stabilized perovskite SrIrO3 and demonstrated the effective strain-control on its electronic structure. Comprehensive transport measurements showed that the strong spin-orbit coupling renders a novel semimetallic phase for the J_eff=1/2 electrons rather than an ordinary correlated metal, elucidating the nontrivial mechanism underlying the dimensionality-controlled metal-insulator transition in iridates. The electron-hole symmetry of this correlated semimetal was found to exhibit drastic variation when subject to bi-axial strain. Under compressive strain, substantial electron-hole asymmetry is observed in contrast to the tensile side, where the electron and hole effective masses are comparable, illustrating the susceptivity of the J_eff=1/2 to structural distortion. Tensile strain also shrinks the Fermi surface, indicative of an increasing degree of correlation which is consistent with optical measurements. These results pave a pathway to investigate and manipulate the electronic states in spin-orbit-coupled correlated oxides, and lay the foundation for constructing 5d transition metal heterostructures., Comment: 5 pages, 4 figures

Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion problem for the study of the out-diffusion of Mn interstitials during a sequence of annealing steps. Our data demonstrate that the out-diffusion of the interstitials is substantially affected by the internal electric field caused by an inhomogeneous distribution of charges in the (Ga,Mn)As layer., Comment: 11 pages, 5 figures

We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. SQUID magnetization measurements are performed to study the control of magnetic anisotropy in (Ga,Mn)As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn)As. Based on the overall agreement between experimental data and theoretical modeling we conclude that the micropatterning induced anisotropies are of the magnetocrystalline, spin-orbit coupling origin., Comment: 11 pages, 18 figures

We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the dots strain is compressive. Our experiments confirm that the average tensile strain in the film increases with decreasing dots separation. This trend in strain is accompanied by an increase of the out-of-plane magnetization component familiar from the established relation between strain and magnetic anisotropy in GaMnAs films. Our work provides a new route for controlling magneto-crystalline anisotropies in GaMnAs on a nanometer scale., Comment: Abstract + Text(4 pages) + References(16) + Figures captions(4). Images for 4 figures attached sequentially at the end of the document.