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We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$., Comment: 22 pages, 4 figures

After the theoretical prediction that SmB$_6$ is a topological Kondo insulator, there has been an explosion of studies on the SmB$_6$ surface. However, there is not yet an agreement on even the most basic quantities such as the surface carrier density and mobility. In this paper, we carefully revisit Corbino disk magnetotransport studies to find those surface transport parameters. We first show that subsurface cracks exist in the SmB$_6$ crystals, arising both from surface preparation and during the crystal growth. We provide evidence that these hidden subsurface cracks are additional conduction channels, and the large disagreement between earlier surface SmB$_6$ studies may originate from previous interpretations not taking this extra conduction path into account. We provide an update of a more reliable magnetotransport data than the previous one (Phys. Rev. B 92, 115110) and find that the orders-of-magnitude large disagreements in carrier density and mobility come from the surface preparation and the transport geometry rather than the intrinsic sample quality. From this magnetotransport study, we find an updated estimate of the carrier density and mobility of 2.71$\times$10$^{13}$ (1/cm$^2$) and 104.5 (cm$^{2}$/V$\cdot$sec), respectively. We compare our results with other studies of the SmB$_6$ surface. By this comparison, we provide insight into the disagreements and agreements of the previously reported angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and magnetotorque quantum oscillations measurements.

A well-known feature in transport data of the topological Kondo insulator SmB$_6$ is the sign change in the Hall coefficient at 65 K. Carriers in SmB$_6$ are known to be negative, but above 65 K, the Hall sign suggests that the carriers are positive. Here, we extend Hall measurements up to 400 K and observe that the Hall coefficient changes back to the correct (negative) sign at about 305 K. We interpret the anomalous sign of the Hall coefficient in the context of skew scattering arising from the strong correlations between the $f$ and $d$ electrons. At energy scales where the gap is closed, the number of $d$ electrons in resonance with the $f$ electrons at the Fermi energy varies. When a large proportion of $d$ and $f$ electrons are in resonance, skew scattering is dominant, leading to the observation of the positive sign, but when fewer are in resonance, conventional scattering mechanisms dominate instead., Comment: 4 pages, 4 figures, submitted to Journal of Superconductivity and Novel Magnetism

We performed angle resolved photoemission (ARPES) experiments on Bi2Te3 with circularly polarized light. ARPES data show very strong circular dichroism, indicating existence of orbital angular momentum (OAM). Moreover, the alignment of OAM is found to have a strong binding energy dependence. Such energy dependence comes from a relatively strong band warping effect in Bi2Te3 compared to Bi2Se3. OAM close to Dirac point has an ideal chiral structure (sin ?) without out-of-plane component. Warping effect comes in as the binding energy decreases and circular dichroism along a constant energy contour can no longer be explained by a simple sin? function but requires a sin3? term. When the warping effect becomes even stronger near the Fermi energy, circular dichroism gains an additional sin6? term. Such behavior is found to be compatible with the theoretically predicted OAM structure.