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Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and reaching the scale of single molecules \cite{molecular1,molecular2,molecular3} which could serve as nanoelectronic circuit components such as transistors. Connecting molecules or nanoparticles to external leads cannot be achieved by the traditional methods used in semiconductor based QDs, hence, controlling the coupling to nanoparticle QDs is a major technical challenge. Here we present a novel technique by which we can explore electric properties of a metallic nanoparticle while varying the coupling to leads. We find that the conductance through the nanoparticle is characterized by \emph{two} gate voltage periods. The relative strength of the periods depends both on the dot-lead coupling and on the source-drain voltage. These surprising findings may be a general property of strongly coupled metallic nanoparticles., Comment: 5 pages, 4 figures

We demonstrate that by carefully analyzing the temperature dependent characteristics of the I-V measurements for a given complex system it is possible to determine whether it is composed of a single, double or multiple quantum-dot structure. Our approach is based on the orthodox theory for a double-dot case and is capable of simulating I-V characteristics of systems with any resistance and capacitance values and for temperatures corresponding to thermal energies larger than the dot level spacing. We compare I-V characteristics of single-dot and double-dot systems and show that for a given measured I-V curve considering the possibility of a second dot is equivalent to decreasing the fit temperature. Thus, our method allows one to gain information about the structure of an experimental system based on an I-V measurement., Comment: 12 pages 7 figures