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Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In the present lecture, we discuss the use of a buffer layer between the epitaxial layer and the substrate in order to reduce the defectiveness and improve the overall quality of the SiC epi-film. In particular, we find that the morphology and the quality of the epi-film depends on the carbonization temperature and the concentration of Ge in close proximity of the Si1-xGex/SiC interface. Ge segregation at the interface influences the film quality, and in particular a [Ge]>12% in close proximity to the interface leads to the formation of poly-crystalls, while close to 10% induces a mirror like morphology. Moreover, by finely tuning the Ge concentration and carbonization temperature, crystal quality higher than that observed for SiC grown on bare silicon is achieved., Comment: 15 pages, 6 figures

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient indicating a clear role of atmospheric O$_2$ on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism we determine the length scale over which the interface potential influences the effective mass.

Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while below $D\approx$ 4.6 nm: $E_{G}\sim D^{-2}$ due to electron/ hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small $D$.

We calculate the effect of a spatially dependent effective mass (SPDEM) [adapted from R. N. Costa Filho et al. Phys. Rev. A., \textbf{84} 050102 (2011)] on an electron and hole confined in a quantum well (QW). In the work of Costa Filho et al., the translation operator is modified to include an inverse character length scale, $\gamma$, which defines the SPDEM. The introduction of $\gamma$ means translations are no longer additive. In nonadditive space, we choose a `skewed' Gaussian confinement potential defined by the replacement $x\rightarrow\gamma^{-1}\ln(1+\gamma x)$ in the usual Gaussian potential. Within the parabolic approximation $\gamma$ is inversely related to the QW thickness and we obtain analytic solutions to our confinement Hamiltonian. Our calculation yields a reduced dispersion relation for the gap energy ($E_G$) as a function of QW thickness, $D$: $E_G\sim D^{-1}$, compared to the effective mass approximation: $E_G\sim D^{-2}$. Additionally, nonadditive space contracts the position space metric thus increasing the occupied momentum space and reducing the effective mass, in agreement the relation: $m_o^{*-1}\propto \frac{\partial^2 E}{\partial \v{k}^2}$. The change in the effective mass is shown to be a function of the confinement potential via a point canonical transformation. Our calculation agrees with experimental measurements of $E_G$ for Si and Ge QWs.