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Two-photon excitation in the near-infrared (NIR) of colloidal nanocrystalline silicon quantum dots (nc-SiQDs) with photoluminescence also in the NIR has the potential to open up new opportunities in the field of deep biological imaging. Spectra of the degenerate two-photon absorption (2PA) cross section of colloidal nc-SiQDs are measured using two-photon excitation over a spectral range $1.46 < \hbar \omega < 1.91$ eV (wavelength $850 > \lambda > 650$ nm) above the two-photon band gap $E_g^{(QD)}/2$, and at a representative photon energy $\hbar \omega = 0.99$ eV ($\lambda = 1250$ nm) below this gap. Two-photon excited photoluminescence (2PE-PL) spectra of nc-SiQDs with diameters $d = 1.8 \pm 0.2$ and $d = 2.3 \pm 0.3$ nm, each passivated with 1-dodecene and dispersed in toluene, are calibrated in strength against 2PE-PL from a known concentration of Rhodamine B dye in methanol. The 2PA cross section is observed to be smaller for the smaller diameter nanocrystals and the onset of 2PA is observed to be blueshifted from the two-photon indirect band gap of bulk Si, as expected for quantum confinement of excitons. The efficiencies of nc-SiQDs for bio-imaging using 2PE-PL are simulated in various biological tissues and compared to other quantum dots and molecular fluorophores and found to be superior at greater depths., Comment: 35 pages, 21 figures, 79 references. The following manuscript was published in ACS Nano. This preprint is the submitted version. The peer-reviewed article can be found here: https://doi.org/10.1021/acsnano.1c11428

Spectra of the degenerate two-photon absorption coefficient $\beta(\omega)$, anisotropy parameter $\sigma(\omega)$, and dichroism parameter $\delta(\omega) = \big[\sigma(\omega) + 2\eta(\omega)\big]/2$ of crystalline 110-cut GaAs, GaP, and Si at 300 K were measured using femtosecond pump-probe modulation spectroscopy over an excitation range in the vicinity of each material's half-band gap $E_g/2$ (overall $0.62 < \hbar \omega < 1.91$ eV, or $2000 > \lambda > 650$ nm). Together these three parameters completely characterize the three independent components of the imaginary part of the degenerate third-order nonlinear optical susceptibility tensor $\mathrm{Im}\{\chi^{(3)}_{abcd}(\omega)\}$. In direct-gap GaAs, these components peak at $\hbar \omega \approx 0.78 E_g$ which is close to the peak at $\hbar \omega = 0.71 E_g$ predicted by the Jones-Reiss phenomenological model. The dispersion is comparable to ab initio calculations. In indirect-gap GaP and Si, these components tend to increase with $\hbar \omega$ over our tuning range. In Si, the dispersion differs significantly from predictions of semi-empirical models and ab initio calculations do not account for transitions below the two-photon direct band gap, motivating further investigation. Kleinman symmetry was observed to be broken in all three materials. We also note anomalies observed and their possible origins, emphasizing the advantages of a 2-beam experiment in identifying the contribution of various nonlinear effects., Comment: 62 pages, 63 figures, 86 references. The following article has been accepted by J. Appl. Phys. After it is published, it will be found at https://aip.scitation.org/journal/jap; added references, changes to manuscript after peer review, minor changes to supplementary material, and typos corrected