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Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8x8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

We review our recent developments of near-field scanning optical microscopy (NSOM) that uses an active tip made of a single fluorescent nanodiamond (ND) grafted onto the apex of a substrate fiber tip. The ND hosting a limited number of nitrogen-vacancy (NV) color centers, such a tip is a scanning quantum source of light. The method for preparing the ND-based tips and their basic properties are summarized. Then we discuss theoretically the concept of spatial resolution that is achievable in this special NSOM configuration and find it to be only limited by the scan height over the imaged system, in contrast with the standard aperture-tip NSOM whose resolution depends critically on both the scan height and aperture diameter. Finally, we describe a scheme we have introduced recently for high-resolution imaging of nanoplasmonic structures with ND-based tips that is capable of approaching the ultimate resolution anticipated by theory., Comment: AD, AC, OM, MB and SH wish to dedicate this brief review article to their co-author and colleague Yannick Sonnefraud who passed away in September 2014. Yannick initiated this research in 2008

A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a function of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.