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Samples of $\alpha$-SiC have been sintered with liquid phase (LPS) to 1950 $^\circ$C, in atmosphere of argon and processing times between 1 and 7 hours. Using scanning electron microscopy (SEM) the microstructure of the samples has been characterized, being obtained average grain size that grows with the processing time from 0.64 to 1.61 $\mu$m. These samples have been deformed in compression under constant load, to temperatures between 1450 and 1625 C, stresses between 25 and 450 MPa and strain rate between $4.2\times 10^{-8}$ and $1.5\times 10^{-6}$ s$^{-1}$. The creep parameters have been determined, obtaining for n values between 2.4 0.1 and 4.5 0.2 and Q=680 35 kJ.mol$^{-1}$ in samples sintered during 1 hour and n between 1.2 0.1 and 2.4 0.1 and Q=710 90 kJ.mol$^{-1}$ for samples sintered during 7 hours. These results have been correlated with the microstructure, being the grain boundary sliding (GBS) accommodated by lattice diffusion and the movement of dislocations the possible deformation mechanisms, operating both in a simultaneous way., Comment: in Spanish language (Microestructura y propiedades mec\'anicas a altas temperaturas del $\alpha$-SiC sinterizado con fase l\'iquida de Y$_2$O$_3$-Al$_2$O$_3$)

In this degree work, a theoretical computational study on high entropy alloys (HEAs) was carried out. Two specific alloys were chosen for study, AlCoCrFeNi and TiVZrNbHf. The study was based on the parameters deduced from the Hume-Rothery rules, thermodynamics and the configurational (or mixing) elastic energy. The enthalpy of formation was studied as a contribution due to the configurational elastic energy, with the objective of being able to know which are the chemical elements and their respective molar proportions, in such a way that the formation of HEAs and the storage of hydrogen are favoured. To achieve this, a FORTRAN90 program was developed, which allowed a wide variety of results that are generally in agreement with the theoretical-experimental literature. In general, it was found that the approximation that exists by considering that the HEAs are elastically isotropic is correct, where it was assumed that there is an equivalent average Bulk Modulus for each atomic species., Comment: in Spanish language, 69 pages, 35 figures, 4 supplementary figures, 2 tables

We present an introduction to metamaterials, some of their optical prop-erties, and examples of their uses. We develop an efficient theory for thecalculation of the macroscopic permittivity of binary systems and systemswith more components, in the non-retarded case and in the general case, andwe present its implementation in a computational package and illustrate itsuse. We discuss some applications regarding the design of optimized nanos-tructured optical devices and we discuss the linear and non-linear properties obtained. Presentamos una introducci\'on a los metamateriales, algunas de sus pro-piedades \'opticas y ejemplos de sus usos. Desarrollamos una teor\'ia eficientepara el c\'alculo de su permitividad macrosc\'opica en sistemas binarios o conm\'as componentes, en el caso no retardado y en el caso general, y presenta-mos su implementaci\'on en un paquete computacional y su uso. Finalizamosdiscutiendo algunas aplicaciones del mismo para el dise\~no de dispositivos \'opti-cos nanoestructurados optimizados y discutimos las propiedades lineales y nolineales obtenidas., Comment: in Spanish

Characterization and determination of the optical constants for thin film silicon compensated through the transmittance spectrum is presented. Such properties were determined by R. Swanepoel model. Comparison between the refractive indices of pure silicon and silicon compensated. Increasing refractive index behavior at low wavelengths in both plots was observed. The difference lies in the concentration and type of element that has been added to the thin film. The behavior of the dielectric constant was studied, their relationship with the refractive index. It is found that the value of the dielectric constant to a thin film of silicon compensated agree with those reported in the literature. The reported value of the gap for pure silicon corresponds to $ 1.11eV $ and the value of the gap for the sample corresponds to $ 0.7275eV $, the discrepancy is due to the level of concentration in the compensated silicon film., Comment: 22 pages, in Spanish, 20 figures

Solar cells based on kesterite-type $Cu_2ZnSnS_4$ (CZTS) thin films were fabricated using a chemical route to prepare the $CZTS$ films, consisting in sequential deposition of $Cu_2SnS_3$ (CTS) and $ZnS$ thin films followed by annealing at $550^\circ C$ in nitrogen atmosphere. The $CTS$ compound was prepared in a one-step process using a novel chemical procedure consisting of simultaneous precipitation of $Cu_2S$ and $SnS_2$ performed by diffusion membranes assisted $CBD$ (chemical bath deposition) technique. Diffusion membranes were used to optimize the kinetic growth through a moderate control of release of metal ions into the work solution. As the conditions for the formation in one step of the $Cu_2SnS_3$ compound have not yet been reported in literature, special emphasis was put on finding the parameters that allow growing the $Cu_2SnS_3$ thin films by simultaneous precipitation of $Cu_2S$ and $SnS_2$. For that, we propose a methodology that includes numerical solution of the equilibrium equations that were established through a study of the chemical equilibrium of the system $SnCl_2$, $Na_3C_6H_5O_7\cdot 2H2O$, $CuCl_2$ and $Na_2S_2O_3\cdot5H_2O$. The formation of thin films of $CTS$ and $CZTS$ free of secondary phases grown with a stoichiometry close to that corresponding to the $Cu_2SnS_3$ and $Cu_2ZnSnS_4$ phases, was verified through measurements of X-ray diffraction $(XRD)$ and Raman spectroscopy. Solar cell with an efficiency of $4.2%$, short circuit current of $16.2 mA/cm^2$ and open-circuit voltage of 0.49 V was obtained., Comment: in Spanish

Nickel oxide (NiO) is a binary compound with a lot of applications in the present technology. NiO thin films were deposited by reactive sputtering magnetron under several voltage biases applied in the glass substrates (0, 50, 100, 200, 300, 400 and 500 V). Films were characterized by profilometry, X-ray diffraction, elemental composition and electrical resistivity at room temperature and at low temperatures. The present work showed that despite the insulating behavior of substrate the residual stress was reduced at high biases and the (111) texture was promoted. Electrical resistivity was reduced at high bias and at low temperatures thermal activation of p-type conduction was detected., Comment: 6 pages, in Spanish, Proceeding of XI ESPE Congress held at Sangolqu\'i (Ecuador)

The results of a previous work, where it was considered the effect of hole doping on a simple model of the CuO2 planes in La2CuO4, are extended. The parameters are adjusted with the objective to fix the known values of the gap of 2 eV for this material and its dielectric constant of 21. We find again indications of a "hidden" phase transition beneath the superconductor dome. The transition is a second order one, and is associated with an energetic coincidence of a ground insulator state (AFA)with an excited paramagnetic state showing a pseudogap (PPG), at a critical point of the hole concentration around xc=0.2. The evolution as a function of doping of the band structures and the Fermi surface of the system in the phases AFA and PPG, is shown. In the zone of low doping, the holes begin to occupy the states located at the mid of the sides of the Brillouin zone, that in the AFA states have the strongest antiferromagnetic character. Around the critical doping the results show that in both phases, the Fermi surfaces and the energy spectrum of the filled electronic states tend to coincide., Comment: 8 pages, in Spanish, 20 figures

Aluminum and their alloys, after careful treatments, can develop excellent mechanical, tribological, electrical and chemical (high corrosion resistance) properties. However, 7000 series, with Cu in the alloy, have a poor corrosion resistance. On the other hand, aluminum nitride (AlN) has a wurtzitic phase and good thermal stability, optical, electric, piezoelectric, mechanical, tribological, and chemical properties, so the application range is huge. In this paper, AlN deposition on Al 7075 was done using the reactive magnetron sputtering technique in order to verify the aluminum nitride performance as an Al alloy protective film under wear and corrosive processes., Comment: 6 pages, 5 figures, in Spanish