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By critically examining the traditional theory of homogeneous nucleation of precipitates in solid solutions, it is revealed that the theory's assertion regarding an increase in the nucleation free energy due to elastic strain associated with the difference in atomic volumes between the two phases is applicable to coherent precipitates, but becomes incorrect when applied to incoherent precipitates. This conclusion is obtained by accounting for thermal point defects in the matrix, which can be absorbed at the interface between an incoherent particle and the matrix during nucleation, thereby relieving elastic stresses. Accordingly, a new kinetic model based on the Reiss theory for binary nucleation is proposed for predicting the nucleation rate of incoherent precipitates by agglomeration of solute atoms and point defects, with a further extension to account for excess vacancies formed under non-equilibrium conditions of quenching experiments., Comment: Published in Russian Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki 165 (2024) 214-225

The phase formation of terbium chromium borate in melt solutions based on bismuth trimolybdate and lithium tungstate was studied. It was shown that there is no trigonal phase of terbium chromium borate in a system based on bismuth trimolybdate at all component ratios. The ratio of components of a system based on lithium tungstate has been found, at which trigonal TbCr$_3$(BO$_3$)$_4$ crystals are formed at temperatures above 1100$^\circ$C, and below this temperature only a monoclinic phase is formed. The X-ray properties of the grown crystals were studied., Comment: 12 pages, in Russian language, 1 table

The work examines ferromagnetic films with strong uniaxial anisotropy of the "easy plane" type and substantiates that paired nano-scaled perforations in such films can be used as memory cells for recording and storing data in the ternary number system. The problem of reading the state of cells of this type has been studied, and an approach to solving it has been proposed, which consists in measuring the response of the system to a picosecond pulse of an external magnetic field. The parameters of the system at which the magnitude of this response is greatest were obtained, and estimates of this value were made using both analytical and numerical methods. -- V rabote issleduyutsya ferromagnitnyje plenki s silnoj odnoosnoj anizotropiej tipa "legkaya ploskost" i obosnovyvaetsya, chto parnyje nanorazmernyje perforacii v takih plenkah mogut byt ispolzovany v kachestve yacheek pamyati dlya zapisi i hraneniya dannyh v troichnoj sisteme ischisleniya. Izuchena problema schityvaniya sostoyaniya yacheek takogo tipa, a takzhe predlozhen podhod k ee resheniyu, zaklyuchayushhijsya v izmerenii otklika sistemy na pikosekundnyj impuls vneshnego magnitnogo polya. Polucheny parametry sistemy, pri kotoryh velichina dannogo otklika okazyvaetsya naibolshej, a takzhe provedeny ocenki etoj velichiny kak analiticheskimi, tak i chislennymi metodami., Comment: 9 pages, 4 figures, in Russian

The paper investigates the behavior of 0 degree domain boundaries arising in uniaxial magnetic films with flexomagnetoelectric effect in a magnetic field. It is shown that at certain orientations of the magnetic field, it is possible to significantly enhance (or weaken) the degree of manifestation of the flexomagnetoelectric effect in the studied films. In addition, by varying the magnitude and directions of the magnetic field, it is possible to significantly lower (up to zero) the value of the critical electric field of the origin of this inhomogeneity. It is also established that a 0 degree domain boundary of non-Anelian type, in which induced bound charges do not create a resultant field (field shielding), when a magnetic field directed perpendicular to the plane of rotation of magnetic moments is applied, a flexomagnetoelectric effect occurs, which increases with increasing magnitude of the magnetic field., Comment: 9 pages, in Russian language, 12 figures

The work is devoted to the study of the processes of formation and analysis of the parameters of a functional nanostructure -- a superconducting spin valve, which is a multilayer structure consisting of ferromagnetic cobalt nanofilms separated by niobium superconductor films. The studies were carried out using molecular dynamics simulations. The atomic structure of individual nanolayers of the system is considered., Comment: Invited talk of prof. A.Sidorenko at XXIV International Symposium "Nanophysics and Nanoelectronics" in Nyjnii Novgorod, 2020, in russian

This paper considers magnetic films with uniaxial anisotropy of the type "easy plane". It was found that in the presence of structural defects in such films, which are artificially created holes or non-magnetic inclusions, vortex-like inhomogeneities with a topological charge can form on them. Their stability is considered and it is shown in what cases (depending on the value and directions of currents, number of holes, etc.) they form stable configurations, suitable for information encoding. -- V rabote rassmatrivajutsja magnitnye plenki s odnoosnoj anizotropiej tipa "legkaja ploskost". Ustanovleno, chto pri nalichii v takih plenkah strukturnyh defektov, predstavljajushhih soboj iskusstvenno sozdannye otverstija ili nemagnitnye vkljuchenija, na nih mogut obrazovyvatsja vihrepodobnye neodnorodnosti, imejushhie topologicheskij zarjad. Rassmotrena ih ustojchivost i pokazano, v kakih sluchajah (v zavisimosti ot velichiny i napravlenija tokov, chisla otverstij i t.d.) oni obrazujut stabilnye konfiguracii, prigodnye dlja kodirovanija informacii., Comment: 8 pages, 5 figures, in Russian, to be published in JETP Letters on 25.01.2022

The results of studies of melting and crystallization processes in Bi-Ge layered film system are presented. These systems were prepared by subsequent condensation of components in vacuum. It has been shown that the melting temperature in system under study decreases with the decrease of Bi film thickness. The differential technique used for melting temperature registration enables us to measure the value of eutectic temperature $T_\epsilon$ = 542 K in the system. The values of supercooling upon crystallization ($\Delta T$ = 93 K) and wetting angle ($\theta = 68^\circ$) have been determined for Bi islands on amorphous Ge substrate., Comment: in Russian

The results of studies of supercooling upon crystallization value of Bi, Sn and Pb nanosized particles on the Al substrate and between the Al layers have been presented. It has been shown the efficiency of usage of layered film systems for investigation of the limiting supercooling in particle-matrix systems with an eutectic type of interaction between components. The obtained results have been discussed and compared with literature data. ----- Predstavleny rezultaty issledovanij pereohlazhdenij pri kristallizacii nanorazmernyh chastic Bi, Sn i Pb na Al podlozhke i mezhdu sloyami alyuminiya. Pokazana effektivnost ispolzovaniya sloistyh plenochnyh sistem dlya issledovaniya predelnogo pereohlazhdeniya v sistemah chastica-matrica s evtekticheskim tipom vzaimodejstviya mezhdu komponentami. Poluchennye rezultaty obsuzhdeny i sopostavleny s literaturnymi dannymi., Comment: in Russian

Modern methods for studying wetting in nanodisperse systems based on the use of electron microscopy and experimental results on the size effects in the interaction of highly dispersed phases are presented. For students of physical and Physics and Technology specialties of higher educational institutions. ----- Izlozheny sovremennye metody issledovaniya smachivaniya v nanodispersnyh sistemah, osnovannye na primenenii elektronnoj mikroskopii, i eksperimentalnye rezultaty o proyavlenii razmernyh effektov pri kontaktnom vzaimodejstvii vysokodispersnyh faz. Dlya studentov fizicheskih i fiziko-tehnicheskih specialnostej vysshih uchebnyh zavedenij., Comment: in Russian

Ejection of atoms from (001) surfaces of a number of real and model single crystals is studied by molecular dynamics computer simulation. Evolution of energy distributions of sputtered atoms with polar and azimuthal angle resolution with increase of atomic number of the target is investigated. For low energies the maximum of overfocused atoms is more sensitive to the increase of atomic number of the target than the maximum of focused atoms. Evolution of the polar angular distributions of sputtered atoms with energy and azimuthal angle resolution with increase of atomic number of the target is also studied. Maxima of focused and overfocused atoms are very sensitive to the increase of atomic number of the target. The observed maxima shifts are due to stronger blocking effect with increase of atomic number of the target. Keywords: single crystal sputtering, ejection of atoms from a surface, energy distribution of sputtered atoms, polar angular distribution, focused atoms, overfocused atoms, molecular dynamics simulation method., Comment: 25 pages, 5 figures (in Russian)

In the present paper the forward sputtering of atoms of the components under ion bombardment of the single crystal VSi2 (0001) face is studied with the use of molecular dynamics computer simulations. Sputtering of atoms of the components under ion bombardment of the virtual single crystals VV2 and SiSi2 consisting of atoms of the same mass but located in the lattice sites of V and Si sublattices is calculated. The new effect in the selective sputtering of two-component targets is studied: atoms from the vanadium lattice sites are preferentially forward sputtered for equal masses and equal surface binding energies of atoms of the components. This effect one could name the effect of nonidentity of lattice sites of the components in the complex lattice of VSi2 (of the C40 type) to the propagation of momentum in collision cascades and thus the effect of structure in the selective sputtering of two-component single crystal targets. Key words: sputtering, transmission of ions, selective sputtering, transmission sputtering, two-component targets, VSi2, thin single-crystal films., Comment: 18 pages, 4 figures (in Russian)

Given recipe of qualitative, kinetic modelling by geometric methods of three-dimensional dendritic crystals. Characteristic features of the perturbations appearing on the surface of a spherical body, leading to different scenarios of the same equilibrium shape receiving of the same of crystal, are established. Fulfilled computer embodiment of such dendritic crystals which are growing both in conditions without convective flow and in the oncoming flow of liquid. Special attention is paid to topological characteristics of models with non-crystallographic point groups of symmetry. Surfaces of various genus, including 270, were investigated., Comment: (In Russian) 25 pages, 7 figures, 18 references

The problem of constructing a limit series of Penrose type partitions of a two-dimensional sphere is solved, which makes it possible to model quasicrystals possessing a point icosahedral group symmetry Ih. Images of polyhedron models are given (the number of faces for which F> 5000). Based on certain spherical isohedral polyhedra, a recipe is described for constructing spherical polyhedra of Plato, Archimedes, Catalan and Johnson. The boundaries of the chromatic number in the space S2 are established., Comment: (In russian), 26 pages, 6 figures

The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 \deg C to 500 \deg C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer., Comment: Candidate of sciences (russian PhD analog) dissertation. 119 pages (excluding 7 pages of preface), 29 figures, 12 tables, 124 bibliographic references. Written in russian language (except the preface). Defended 2016-12-22 at Bauman Moscow State Technical University. This particular dissertation was minor corrected (typos, doi links) against the version that was presented at the defense procedure

The results of the investigation of the spectral characteristics of new luminescent substances based on rare-earth ions Eu3 + and Tb3 + in matrices of double molybdates are presented in the article. The luminescence and excitation spectra are considered, the decay times of the main transitions are determined, and the color coordinates are determined. The results show the possible suitability of using these compounds as white phosphor phosphor components., Comment: papers was published in russian

Peculiarities of the focusing and overfocusing of atoms sputtered from the surface of (001) Ni face are studied with the use of molecular dynamics computer simulations. It is discovered that the numbers of focused and overfocused sputtered atoms decrease under the transition of the (001) Ni face from the paramagnetic to the ferromagnetic state. The evolution of the two-dimensional energy and polar angle resolved distributions of sputtered atoms when changing the azimuthal angle and the binding energy of atoms at the surface is investigated., Comment: 14 pages, 3 figures (in Russian). Presented at the 23rd International Conference on Ion-Surface Interactions (ISI-2017), Moscow, Russia, 21-25 August 2017

The residual stress induced in assembly is a common concern in electronic packaging. The mismatch in coefficient of thermal expansion between borosilicate glass and silicon, upon temperature variation, generates an internal stress state. This affects important characteristics of microelectromechanical devices or constituent elements. Such as self frequence or stiffness. Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied in this paper. Stress calculation based on lamination theory is presented. Usage examples of such calculations are described. For bonded silicon and LK-5 glass several results of calculations are presented. Stress distribution in bonded silicon and glass of several thicknesses is evaluated. Stress distribution in bonded glass-silicon-glass structure is evaluated. Bonded silicon surface stress dependence of glass to silicon wafer thickness ratio is evaluated. Experimental study of thermal mismatch stress in glass based on birefringence phenomenon was conducted. It's results are presented in this paper. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress., Comment: 9 pages, 4 figures, written in russian. arXiv admin note: text overlap with arXiv:1802.01472

Processing results of measurements of linear thermal expansion coefficients and linear thermal expansion of two brands of borosilicate glasses --- LK5 and Borofloat 33 --- are presented. The linear thermal expansion of glass samples have been determined in the temperature range 130 to 800 K (minus 143 to 526 $\deg$C) using thermomechanical analyzer TMA7100. Relative imprecision of indirectly measured linear thermal expansion coefficients and linear thermal expansion of both glass brands is less than $\pm$5 % and $\pm$3 % respectively. Polynomial equations, approximating temperature dependence of obtained measurements, are presented. The results will facilitate the modeling of the characteristics of the devices which are used in microsystems engineering and fabricated by anodic bonding of silicon to glass, they can also be used to optimize the temperature regime of silicon to glass bonding process. Keywords: linear expansion, thermal expansion coefficient, thermomechanical analysis, borosilicate glass., Comment: 6 pages, 2 figures (with subfigures), 1 table, written in russian language

The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given., Comment: (in Russian)

Proposed the computerized method for calculating the relative level of order composites. Correlation between a level of structure order and properties of solids is shown. Discussed the possibility of clarifying the terminology used in describing the structure., Comment: in Russian

The paper describes the investigation of the properties of silver besilicate salt colloids in water medium. Ag6Si2O7 was obtained in a soft conditions, in water medium, at temperatures and pressure close to room ones. The morphology and crystallinity of matter under investigations appear to depend on the growth conditions. Slow growth resulted in quasi-crystalline yellowish whiskers, while high concentration of precursors led to fast formation of the quasi-amorphous aggregates. The elemental constitution of object under study was determined with the help of Comebax-INCA set-up, and was then proved by chemical analysis. The ratio of elements was close to Ag6Si2O7, and depended a little whether the sample was taken from the sediments of reaction or from dried residue of a liquid medium. The experiments in Raman technique revile several well-resolvable bands in whisker-like samples, but only few of them were able to detect in quasi-amorphous material. In the last case the bands were broader, but the positions of weak broad bands were close to the positions of corresponding bands in whiskers. We can suggest, that the bands, common in two former cases, are due to oscillation in bepyramidal molecules of Ag6Si2O7, and the bands, seen only at whiskers, are due to long-rang order. The very special peculiarity was observed under chemical test with hydrochloric acid. The white flakes sedimentation appeared after addition of NaCl but do not appeared when HCl was added. This result can be explained if to assume the existence of silicon acid shell around the colloidal particles of silver besilicate. The model of silicon acid shell around colloids was proved by high resolution electron microscopy., Comment: 7 pages, in Russian, 7 figures

A new optical state is described both analytically and numerically at the boundary of a chiral medium with continuous helical symmetry of the dielectric tensor. The tangential wave number is assumed to be zero. The state appears to be localized near the boundary. It does not transfer energy along this boundary and falls off exponentially with the distance from the boundary. The field penetration into chiral medium is blocked at wavelengths close to the helical pitch and corresponding to the photonic band gap. The polarization of light near the boundary has the same sign of chirality as the helical medium. It is shown that the homogeneous environment, or the substrate must exhibit the anisotropic metallic reflection. Spectral manifestation of the state is determined by the angle between the optical axes at the interface. A realistic example is considered at the boundary of a cholesteric liquid crystal and a metal-dielectric anisotropic nanocomposite., Comment: In Russian, 5 pages, 2 figures

A continuous model of double-walled carbon nanotube (DWCNT) low-frequency dynamics was constructed. In the frame of the approach proposed formation of a DWCNT low-frequency phonon spectrum from the ones of corresponding single-walled carbon nanotubes (SWCNTs) was considered. Environmental influence on the individual DWCNT phonon spectrum was studied. A combined method of van der Waals interlayer coupling coefficients evaluation was proposed, and it is based on Raman spectroscopy data and known values of graphite elastic moduli. Also DWCNT low-temperature specific heat was calculated. In the model applicability region (at temperatures lower than 35 K) DWCNT specific heat turned out to be significantly lower than the specific heat sum of corresponding individual single-walled SWCNTs. This effect is caused mainly by the interlayer coupling instead of DWCNT interaction with environment., Comment: 13 pages, 2 figures, in Russian, accepted for publication in Physics of the Solid State

The features of the azimuthal-angle overfocusing of atoms sputtered from the surface of the Ni (001) face are studied by molecular dynamics computer simulation. The signal of overfocused atoms is found to be multi-valued with respect to the initial azimuthal angle due to different mechanisms of scattering. The overfocused atoms form separate maximum and can be detected in experiments with angle and energy resolution separately from the focused and the own atoms., Comment: 15 pages, 4 figures (in Russian). Presented at the 22nd International Conference on Ion-Surface Interactions (ISI-2015), Moscow, Russia, 20-24 August 2015

The selfconsistent model for the temperature dependence of photoconversion efficiency $\eta$ for highly efficient silicon solar cells (SCs) is developed. It is demonstrated that effect of the efficiency decrease due to increasing temperature is less pronounced in the SCs with lower surface recombination velocity, thus offering a possibility to improve the cells' performance. The photoconversion efficiency of the high efficiency silicon solar cells is modeled for the realistic ambient conditions. The SC operating temperature is determined by self-consistently solving the photocurrent, photovoltage, and energy balance equations, considering both radiative and convective cooling mechanisms. The SC temperature is shown to be substantially higher than the ambient temperature even at very high convection coefficients, such as, e.g., 300 $W / (m^2 \cdot K)$, used in our examples. The photoconversion efficiency for this case is substantially below the efficiency of thermally stabilized SC, for which the operating temperature is close to the external temperature. The open-circuit voltage and photoconversion efficiency of the high-quality silicon solar cells under concentrated illumination are also investigated including the tradeoff between SCs heating and cooling processes., Comment: 20 pages, in Russian, 7 figures

An analysis is made of the conditions for ohmic contacts realization in the case of Schottky contacts. Based on the classical notions about the mechanisms of current flow, we consider the generalized model of Schottky contact that takes into account the thermionic current of majority charge carriers and recombination current of minority charge carriers in Schottky contacts with a dielectric gap. An analysis of the results given by that model made it possible to obtain ohmicity criteria for Schottky contacts and compare the conditions for low injection level and ohmicity of Schottky contacts in the case of silicon-based contacts. It is shown that conditions for Schottky contact ohmicity do not coincide with those for p-n junctions., Comment: 20 pages, in Russian, 4 figures

Numerical methods are developed to solve the problem of abnormal changes of current (conductivity) in polymer composite films which may be used as current, pressure or temperature sensors. General nonlinear model includes the heat equation, the nonlinear dependence of the resistivity of insulating composite intervals on temperature, taking into account the dehydrochlorination reaction, the appearance of conducting systems conjugated double bonds, and Ohm's law for full control circuit net. The property of thermal conductivity equation to smooth surges of source function allows to resolve the nonlinear closed system and carry out calculations by successive small time steps. As a result of numerical calculations we succeeded to explain and simulate virtually all previously seemed anomalous phenomena including spontaneous transitions in the highly conductive state, the conductivity jumps with temperature change, the dependence on sample thickness, etc., Comment: 12 pages, in Russian, 7 figures

The ways of creating of nanoscale systems (conducting filaments) in the ordered structure of a doped semiconductor in the aspect of the modern problems of nanotechnology to improve solar cells. Nuclear methods and processes of interaction of relativistic particles - gamma quants, electrons, protons, neutrons, and fragments of heavy elements with atoms of matter are used, radiation processes of cluster formation and directed Coulomb explosion are applied for formation of the ordered conducting structures., Comment: 41 pages, 12 figures, in Russian

The monograph is devoted to the application of graphite and graphite composites in science and technology. The structure and electrical properties, the technological aspects of production of high-strength synthetic graphites, the dynamics of the graphite destruction, traditionally used in the nuclear industry are discussed. It is focuses on the characteristics of graphitization and properties of graphite composites based on carbon isotope 13C. The book is based, generally, on the original results, and concentrated on the actual problems of application and testing of graphite materials in modern nuclear physics, in scientific and technical applications. For scientists and engineers specializing in nuclear physics and engineering, physics of nuclear reactors, condensed matter, for undergraduate, graduate and post-graduate students of universities physical specialties., Comment: in Russian

The radiative recombination, Shokley-Read recombination, frontal-surface and rear-surface recombination and the recombination at the heterojunction boundaries and the recombination in the space charge region are considered in the calculation of the multijunction solar cell (MSC) efficiency. The calculation is performed by a self-consistent solution of the equations for the photocurrent and photovoltage, as well as the heat balance equation. A cooling of MSC with the increase of the number of cells n and the improvement in the heat dissipation is regarded. It was found that, as the number of cells n is increased, narrowing of spectral range for each cell causes additional reduction of current. A substantial increase in the MSC efficiency can be achieved by improving the heat extraction using radiators and increasing emissivity. A comparison is made between the calculated and experimental efficiency values. A rather good agreement was found. A comparison between this calculation and other formalisms is given., Comment: 21 pages, 7 figures. The paper (in Russian) is submitted for publication in "Fizika i Tekhnika Poluprovodnikov" (Semiconductors)

On the basis of the Green function method, analytical solutions of the diffusion equation which describes nonstationary migration of nonequilibrium interstitial impurity atoms have been derived. It is supposed that the initial distribution of nonequilibrium impurity interstitials is formed due to ion implantation and, therefore, is described by the Gaussian function. The condition of the constant concentration of impurity interstitials (the Dirichlet boundary condition) or reflecting boundary condition was imposed on the surface of a semiconductor. The Dirichlet boundary condition was also enforced for the concentration of impurity interstitials in the infinity, i.e., in the bulk of a semiconductor. On the basis of the solutions derived the redistribution of ion-implanted boron in silicon substrate during low-temperature thermal treatment has been simulated. The calculated profile of boron atoms after annealing agrees well with experimental data. It means that the analytical solutions derived can be used both for verifying the numerical results and for modeling the long-range migration of nonequilibrium impurity interstitials during low-temperature thermal treatments., Comment: 30 pages, 5 figures, in Russian