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It is shown that the time-reversal symmetry is broken during the phase transition causing orbital ordering in a crystal with Jahn-Teller (J-T) ions. This means that such phase transitions are magnetic ones. As an example we have considered the spinel crystals containing $T_{2g}$ ions: $NiCr_2O_4$ ($T_{orb}=310$ K, $T_c=70$ K) and $CuCr_2O_4$ ($T_{orb}=860$ K, $T_c=135$ K), where the orbital ordering precedes the spin ordering, which occurs at lower temperatures. The spin-ordering transition is naturally included into our general group-theoretical scheme of the phase transition. Based on the symmetry group of the parent phase, the symmetry groups for possible orbital- and spin-ordered phases are found. We present arguments in favor of the idea that the orbital ordering occurs due to the superexchange between J-T ions, and the spin ordering is caused by the spin-orbital interaction. At the same time, the displacements of atoms of the coordination polyhedron do not lead to the removal of the orbital degeneracy, and they are merely an accompanying effect., Comment: 22 pages, in English language, 2 figures

During electrostatic bonding, also known as anodic bonding, silicon is bonded to glass by applying an external voltage and simultaneous heating to temperatures of 200...450 $\deg$C. While cooling to working temperature after bonding happened pieces are mutually deformed. Due to linear thermal expansion coefficients mismatch of anodically bonded glass and silicon samples an internal stress state is generated. Such stresses are called thermal mismatch stresses. The aim of this paper is a determination of technological and design solutions to achieve minimal thermal mismatch stresses in resulting bond. The nonlinear dependence of linear thermal expansion coefficients of bonded samples' materials on temperature makes it difficult to minimize thermal mismatch stresses by chosing materials with close average thermal expansion coefficients in particular temperature range. To assess means of lowering thermal mismatch stress in this paper two different ways to describe assembly are used: two thin bonded layers and multilayered composite material. Based on properties of two brands of glass (LK5, Borofloat 33) and silicon used with described mathematical models thermal mismatch stresses at temperature $T_w$ in samples bonded at several different temperatures $T_b$ are evaluated. Bonded silicon surface stress dependence of glass to silicon wafer thickness ratio is evaluated. Based on such evaluations one can say that by varying thickness of glass bonded to silicon one can obtain zero thermal mismatch stress at a particular depth of material or obtain stress of some defined value at this depth. Models of assembly description used in this paper can be used to optimize anodic bonding process parameters. Such usage aimed to minimize thermal mismatch stresses at device working temperatures is presented in this paper., Comment: Accepted manuscript. 12 pages (excluding 1 page preface with abstract in english), 6 figures, 18 bibliographic references. Written in russian language (except the preface). References updated with arXiv links

A method to measure thermophysical characteristics (TPC) of conductive materials is described. The method is based upon controlled bulk (e.g., Ohmic) heating and measurement of the averaged over the volume of a sample temperature and the temperature of the surface of a sample. To measure averaged over a sample volume temperature a dilatometric technique could be used and surface temperature could be measured by x-ray method. This allows one to avoid distortion of the temperature field by the thermocouples and directly takes into account heat losses from the surface of a sample. The treatment of the experimental data should be based upon theoretical calculations presented in this paper. The measured values of the averaged over the volume of a sample temperature and a surface temperature allow for the calculation of TPC of the material. The experimental data obtained on the iron-based materials prove the high accuracy of the described approach [1-3]., Comment: Theoretic basis of the topic in English