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2. Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate

4. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

5. Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

7. Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

11. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

12. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

13. Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors

16. TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

17. Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs

21. Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

22. Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

27. A System-Level Modeling Approach for Simulating Radiation Effects in Successive-Approximation Analog-to-Digital Converters

28. Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

29. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

31. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

33. Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs

34. Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors

37. Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser

38. Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

39. Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure

41. Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs

44. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

45. Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack

46. Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs

47. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

48. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics

50. Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with sub-10-nm Fin Widths

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