76 results on '"Zhang, E. X."'
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2. Single-Event Effects in Heavy-Ion Irradiated 3kV SiC Charge-Balanced Power Devices
3. Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs
4. Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes
5. Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors
6. In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation
7. Bias-Temperature Instabilities in Silicon Carbide MOS Devices
8. Defect Dehydrogenation in Si-MOS and Compound-Semiconductor-Based Devices
9. Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs
10. Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage
11. Exploiting SEU Data Analysis to Extract Fast SET Pulses
12. Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K
13. Low-frequency noise and defects in copper and ruthenium resistors
14. Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs
15. Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices
16. Dual-Interlocked Logic for Single-Event Transient Mitigation
17. X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices
18. Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation
19. Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications
20. Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics
21. Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques
22. The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops
23. Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors
24. Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits
25. Time-Domain Modeling of All-Digital PLLs to Single-Event Upset Perturbations
26. Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices
27. Memristive devices from ZnO nanowire bundles and meshes
28. Total Ionizing Dose Effects on HfO2-Passivated Black Phosphorus Transistors
29. Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL)
30. Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits
31. Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance
32. Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology
33. 1/f noise in GaN/AlGaN HEMTs
34. Effects of temperature and supply voltage on SEU- and SET-induced single-event errors in bulk 40-nm sequential circuits
35. Analysis of temporal masking effect on single-event upset rates for sequential circuits
36. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
37. Single-event performance of differential flip-flop designs and hardening implication
38. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
39. Radiation Hardening of Voltage References Using Chopper Stabilization
40. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
41. Heavy Ion SEU Test Data for 32nm SOI Flip-Flops
42. Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs
43. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
44. Geometry Dependence of Total-Dose Effects in Bulk FinFETs
45. Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process
46. Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators
47. Soft errors and NBTI in SiGe pMOS transistors
48. Defects in GaN based transistors
49. Bias Dependence of Total-Dose Effects in Bulk FinFETs
50. Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of $n$MOSFETs
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