109 results on '"Zavarin, E. E."'
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2. A GaN/AlGaN Resonance Bragg Structure
3. Critical Disorder in InGaN/GaN Resonant Bragg Structures
4. Variations in the degree of order of GaN epilayer mosaic structure after Si doping
5. SEM investigations of individual extended defects in GaN epilayers
6. Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structure
7. Critical spatial disorder in InGaN resonant Bragg structures
8. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
9. Determination of hole diffusion length in n-GaN
10. Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data
11. Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
12. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
13. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
14. Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells
15. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
16. Proton irradiation effects on GaN-based epitaxial structures
17. 2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions
18. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
19. MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range
20. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
21. Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
22. Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period
23. Phonons in short-period (GaN)m(AlN)nsuperlattices:ab initiocalculations and group-theoretical analysis of modes and their genesis
24. A fabrication of AlGaN / AlN / GaN HEMT without annealing of ohmic contacts
25. Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
26. Insulating GaN Epilayers Co-Doped with Iron and Carbon
27. Two-dimensional plasmons in a GaN/AlGaN heterojunction
28. Investigation of Statistical Broadening in InGaN Alloys
29. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
30. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
31. Resonant Bragg structures with GaN/AlGaN Quantum Wells
32. Barrier height modification and mechanism of carrier transport in Ni/in situgrown Si3N4/n-GaN Schottky contacts
33. Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells
34. Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range
35. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
36. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
37. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
38. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
39. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
40. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
41. InAlN/AlN/GaN heterostructures for high electron mobility transistors
42. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
43. Stress-dislocation management in MOVPE of GaN on SiC wafers
44. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
45. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
46. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
47. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
48. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
49. Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency
50. Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach
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