82 results on '"Young, Chadwin D."'
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2. On the Dopant, Defect States, and Mobility in W Doped Amorphous In2O3 for BEOL Transistors
3. Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance
4. Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor
5. Effect of fabrication processes before atomic layer deposition on β-Ga2O3/HfO2/Cr/Au metal–oxide–semiconductor capacitors
6. Energy storage performance in lead-free antiferroelectric 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3 ultrathin films by pulsed laser deposition
7. Introduction of a Reset MOSFET to Mitigate the Influence of Ionic Movement in Perovskite MOSFET Photodetector Measurements
8. PBTI in High-k Oxides
9. Understanding the FinFET Mobility by Systematic Experiments
10. Graphene Mobility Dependence on the Resistivity of Si Wafer
11. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
12. Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks
13. TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS
14. Enhanced Surface Preparation Techniques for the Si/High-k Interface
15. Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors
16. Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes
17. High-stability pH sensing with a few-layer MoS2 field-effect transistor
18. Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System
19. Relatively Low-Temperature Processing and Its Impact on Device Performance and Reliability
20. Understanding the Effects of Low-Temperature Passivation and Annealing on ZnO TFTs Test Structures
21. Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric
22. Proposed one-dimensional passive array test circuit for parallel kelvin measurement with efficient area use
23. Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications
24. Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure
25. A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
26. Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
27. Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
28. Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD
29. Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
30. Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
31. Hot Carrier Stress Investigation of Zinc Oxide Thin Film Transistors with an Al2O3 Gate Dielectric
32. Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
33. Electrical characterization of process induced effects on non-silicon devices
34. Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
35. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
36. Evaluation of border traps and interface traps in HfO 2 /MoS 2 gate stacks by capacitance–voltage analysis
37. Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time
38. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
39. (Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics
40. Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si
41. (Invited) Investigation of Critical Interfaces in Few-Layer MoS2Field Effect Transistors with High-k Dielectrics
42. Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
43. Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy
44. Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
45. Low Temperature (400°c) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications
46. Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2 field-effect-transistors
47. Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
48. (Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric
49. (Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric
50. Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs
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