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4. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

6. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

9. Use of a supercritical fluid treatment to improve switching region in resistive random access memory

10. Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta2O5-based electrolyte for all-solid-state electrochromic devices with enhanced performance

12. Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM)

16. Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

18. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

19. Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

20. Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

21. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution

23. Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode

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