91 results on '"Wernersson, L. E."'
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2. Core-Shell TFET Developments and TFET Limitations
3. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
4. An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
5. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
6. Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs
7. Clutter Analysis in a Time-domain Millimeter-wave Reflectometry Setup
8. Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
9. Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
10. The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
11. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V
12. High‐frequency InGaAs tri‐gate MOSFETs with f max of 400 GHz
13. InAs nanowire GAA n-MOSFETs with 12–15 nm diameter
14. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
15. A transmission line method for evaluation of vertical InAs nanowire contacts
16. Picosecond dynamics in a millimetre‐wave RTD–MOSFET wavelet generator
17. Defect evaluation in InGaAs field effect transistors with HfO2or Al2O3dielectric
18. Narrow gap nanowires: From nanotechnology to RF-circuits on Si
19. Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric
20. III-V Nanowire MOSFETs in RF-Applications
21. Design of radial nanowire tunnel field-effect transistors
22. High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
23. InAs nanowire MOSFET differential active mixer on Si‐substrate
24. Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires
25. Measurements of light absorption efficiency in InSb nanowires
26. InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)
27. InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces
28. Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
29. Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
30. Wideband and non‐dispersive wavelet transmission using leaky lens antenna
31. Growth and Characterization of Novel Material and Heterostructure III-V Semiconductor Nanowires
32. InGaAs MOSFETs with Regrown Source: DC and RF Performance
33. Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
34. High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET
35. Interface composition of InAs nanowires with Al2O3 and HfO2 thin films
36. High-Frequency Characterization of Vertical InAs Nanowire Wrap-Gate FETs on Si(111) Substrates
37. 60 GHz impulse radio measurements
38. InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
39. Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
40. Impulse-based 4 Gbit/s radio link at 60 GHz
41. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
42. A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
43. Tunneling-based devices and circuits
44. Correlation-Induced Conductance Suppression at Level Degeneracy in a Quantum Dot
45. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
46. Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
47. 60 GHz ultra-wideband impulse radio transmitter
48. Deposition of HfO2 on InAs by atomic-layer deposition
49. 20 GHz Wavelet Generator Using a Gated Tunnel Diode
50. MOVPE growth and structural charactrization of extremely lattice-mismatched InP-InSb nanowire heterostructures
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