138 results on '"Voelskow, M."'
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2. Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions
3. Диффузия атомов In в пленках SiO-=SUB=-2-=/SUB=-, имплантированных ионами As-=SUP=-+-=/SUP=-
4. Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
5. SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer
6. High Dose High Temperature Ion Implantation of Ge into 4H-SiC
7. Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
8. A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
9. Ion beam synthesis by tungsten-implantation into 6H—silicon carbide
10. Ion Beam Induced Epitaxial Crystallization of SiC: Fluence -and Temperature Dependence
11. Diffusion and Interaction of In and As Implanted into SiO2 Films
12. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots
13. XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots
14. Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-
15. Ex situ n+ doping of GeSn alloys via non-equilibrium processing
16. In situ ohmic contact formation for n-type Ge via non-equilibrium processing
17. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films
18. Особенности ионно-лучевого синтеза нанокристаллов Ge в тонких пленках SiO-=SUB=-2-=/SUB=-
19. Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling
20. FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS
21. ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS
22. Epitaxial Regrowth of Amorphous or Polycrystalline Silicon Layers on Silicon Single Crystals and Bridging Epitaxy by Flash Lamp Irradiation
23. EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION
24. Electrical Properties of Ion Implanted and Short Time Annealed Polycrystalline Silicon
25. OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON
26. Flash Lamp Annealing of Arsenic Implanted Silicon
27. Pulsed Incoherent Light Annealing of Arsenic and Phosphorus Implanted Polycrystalline Silicon
28. In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE
29. Annealing Characteristics of SiO2 -Si Structures after Incoherent Light Pulse Processing
30. Dopant Redistribution after Flash Lamp Annealing
31. Low-Energy Implantation of Arsenic in Silicon
32. High-Speed Electron Beam Annealing of Arsenic and Gallium Implanted Silicon
33. Lattice Location Determination of Ge in SiC by ALCHEMI
34. Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure
35. High-fluence Ga-implanted silicon—The effect of annealing and cover layers
36. Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
37. Silicon films with gallium-rich nanoinclusions: from superconductor to insulator
38. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
39. Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors
40. Superconductor-insulator transition controlled by annealing in Ga implanted Si
41. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations
42. Superconducting films fabricated by high-fluence Ga implantation in Si
43. Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2
44. On-chip superconductivity via gallium overdoping of silicon
45. The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices
46. Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
47. Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation
48. Superconductivity in thin-film germanium in the temperature regime around 1 K
49. Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas
50. Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps
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