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3. Si − doped In0.145Ga0.855As0.123Sb0.877: A novel p − type quaternary alloy with high crystalline quality

4. Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSb As1- alloys for mid-infrared applications: Analysis of surface, bulk and interface

5. Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications

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