40 results on '"VanMil, Brenda"'
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2. Development toward Wafer-Scale Graphene RF Electronics
3. Large-Area Epitaxial Graphene: Effect of Strain and Thickness on Electronic Properties
4. AlGaN/SiC Heterojunction Ultraviolet Photodiodes
5. Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy
6. Exploring the Optical Properties of Hg1−x Cd x Se Films Using IR-Spectroscopic Ellipsometry
7. Mercury cadmium selenide for infrared detection
8. Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes
9. High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices
10. Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes
11. Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
12. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC
13. A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
14. Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
15. Doping and electron-stimulated desorption of zinc selenide grown by molecular beam epitaxy
16. Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
17. Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production
18. Epitaxial Graphene Growth on SiC Wafers
19. Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
20. 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
21. Microhardness of 6H- and 4H-SiC Substrates
22. Graphene Formation on SiC Substrates
23. Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
24. Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
25. Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition
26. 4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
27. Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
28. Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
29. 4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm
30. Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging
31. Etch rates for Si-face 4H-SiC using H2 and a C3H8 partial pressure
32. H2 etching and epitaxial growth on 4H-SiC boule domes
33. Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC
34. High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength
35. Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor
36. Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
37. In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
38. Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates
39. In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS
40. Effect on chlorine incorporation as Mg is alloyed into ZnSe
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