103 results on '"Tsatsulnikov, A. F."'
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2. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
3. A GaN/AlGaN Resonance Bragg Structure
4. Critical Disorder in InGaN/GaN Resonant Bragg Structures
5. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
6. Electromechanically Coupled III-N Quantum Dots
7. Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
8. Critical spatial disorder in InGaN resonant Bragg structures
9. A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology
10. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
11. Determination of hole diffusion length in n-GaN
12. Study of Ga2O3 deposition by MOCVD
13. Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
14. Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities
15. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
16. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
17. Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells
18. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
19. Proton irradiation effects on GaN-based epitaxial structures
20. Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes
21. III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors
22. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
23. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
24. GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
25. Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
26. Selective Epitaxy of Submicron GaN Structures
27. Developing of normally-off p-GaN gate HEMT
28. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
29. Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
30. Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
31. Insulating GaN Epilayers Co-Doped with Iron and Carbon
32. Implementation of an artificial neural network to predict properties of MOVPE-grown AlGaN layers
33. Investigation of Statistical Broadening in InGaN Alloys
34. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
35. Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells
36. Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride
37. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
38. Resonant Bragg structures with GaN/AlGaN Quantum Wells
39. Barrier height modification and mechanism of carrier transport in Ni/in situgrown Si3N4/n-GaN Schottky contacts
40. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes
41. Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells
42. Luminescence peculiarities of InGaN/GaN dichromatic LEDs
43. InGaN/GaN light-emitting diode microwires of submillimeter length
44. Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes
45. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
46. Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode
47. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
48. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
49. InAlN/AlN/GaN heterostructures for high electron mobility transistors
50. Stress-dislocation management in MOVPE of GaN on SiC wafers
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