139 results on '"Thoms, S."'
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2. Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes
3. Synthesis of nanostructured calcite particles in coccolithophores, unicellular algae.
4. Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design
5. Modeling Photoprotection at Global Scale: The Relative Role of Nonphotosynthetic Pigments, Physiological State, and Species Composition
6. WIRES AND DOTS IN GaAs-GaAlAs QUANTUM WELLS: LUMINESCENCE INTENSITY STUDIES
7. List of Contributors
8. Raman Scattering and Photoluminescence of GaAs-Based Nanostructures
9. Conduction in n+-GaAs Wires
10. Chlorophyll to Carbon Ratio Derived From a Global Ecosystem Model With Photodamage
11. InAs FinFETs With Hfinnm Fabricated Using a Top–Down Etch Process
12. Methane excess production in oxygen-rich polar water and a model of cellular conditions for this paradox
13. Electronic control of coherence in a two-dimensional array of photonic crystal surface emitting lasers
14. Impact of seawater [Ca2+] on the calcification and calciteMg / Ca of Amphistegina lessonii
15. Impact of seawater Ca2+ on the calcification and calcite Mg/Ca of Amphistegina lessonii
16. Electron Beam Lithography and Dry Etching Techniques for the Fabrication of Quantum Wires in GaAs and AlGaAs Epilayer Systems
17. Aperiodic Quantum Magnetoresistance Oscillations in Submicron n+GaAs Wires
18. G.P.285
19. Coherently Coupled Photonic Crystal Surface Emitting Lasers
20. Dynamical mechanism of antifreeze proteins to prevent ice growth
21. Fabrication of submicron planar Gunn diode
22. Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode
23. InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)
24. P50 Aneuploidy testing of polar bodies by array comparative genomic hybridization (array CGH)
25. First PEX11β patient extends spectrum of peroxisomal biogenesis disorder phenotypes: Table 1
26. A universal carbonate ion effect on stable oxygen isotope ratios in unicellular planktonic calcifying organisms
27. Comparison of hydrogen silsesquioxane development methods for sub-10 nm electron beam lithography using accurate linewidth inspection
28. A universal carbonate ion effect on stable oxygen isotope ratios in unicellular planktonic calcifying organisms
29. Peroxisomal alpha-beta-hydrolase Lpx1 (Yor084w) from Saccharomyces cerevisiae (crystal form I)
30. Peroxisomal alpha-beta-hydrolase Lpx1 (Yor084w) from Saccharomyces cerevisiae (crystal form II)
31. Coexisting methane and oxygen excesses in nitrate-limited polar water (Fram Strait) during ongoing sea ice melting
32. Electrical type conversion of p-type HgCdTe induced by nanoimprinting
33. Nanoimprint induced electrical type conversion in HgCdTe
34. Linewidth metrology for sub-10-nm lithography
35. Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors
36. Electron beam lithography using plasma polymerized hexane as resist
37. Lithography scaling issues associated with III–V MOSFETs
38. Methane production in aerobic oligotrophic surface water in the central Arctic Ocean
39. Methane production in aerobic oligotrophic surface water in the central Arctic Ocean
40. Deep sub-micron and self-aligned flatband III–V MOSFETs
41. Photovoltaic detectors fabricated by direct imprinting of mercury cadmium telluride
42. Resist residues and transistor gate fabrication
43. Optical characterization of a hydrogen silsesquioxane lithography process
44. III-V MOSFETs for Digital Applications with Silicon Co-Integration
45. Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
46. Improvements to the alignment process in a commercial vector scan electron beam lithography tool
47. GaAs MOSFETs - a viable single supply III-V RF technology solution?
48. 1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm
49. Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist
50. Erratum for ‘1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm’
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