38 results on '"Tan, Yung-Fang"'
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2. Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
3. Investigation between Recover Behavior and Defect with Variation of Light Source in AlGaN/GaN HEMTs after Hot-Carrier Stress
4. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation
5. Meridian study on the response current affected by acupuncture needling direction
6. Analysis of Meridian Flow Direction by Electrical Stimulation Method
7. Investigations on TaHf alloys for thin film resistor applications
8. Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity
9. A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory
10. Use of a supercritical fluid treatment to improve switching region in resistive random access memory
11. Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology
12. A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)
13. Influences of aluminum doping on the microstructures and electrical properties of tantalum nitride thin films before and after annealing
14. Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM)
15. Degradation Mechanism Differences between Tin- and Tanelectrode Hzo-Based Ferams Analyzed by Current
16. Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory
17. Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer
18. Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology
19. Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory
20. Impact of oxygen flow rate on performance of indium-tin-oxide-based RRAMs
21. Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors
22. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM
23. Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory
24. A high-speed MIM resistive memory cell with an inherent vanadium selector
25. Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature
26. Investigation on the current conduction mechanism of HfZrOx ferroelectric memory
27. Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
28. Meridian study on the response current affected by electrical pulse and acupuncture
29. Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory
30. Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device
31. Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
32. A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
33. Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory
34. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution
35. Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency
36. Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
37. Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
38. The influence of temperature on set voltage for different high resistance state in 1T1R devices
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