78 results on '"Takahasi, Masamitu"'
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2. Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements
3. Design of nano-ARPES beamline at 3-GeV next-generation synchrotron radiation facility, NanoTerasu
4. Design of nano-spintronics beamline at 3-GeV next-generation synchrotron radiation facility, NanoTerasu
5. Design of Ultrahigh Energy Resolution RIXS Beamline at NanoTerasu
6. Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer
7. X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer
8. In situ Synchrotron X-ray Observation of Anisotropy in the initial stage Lattice Relaxation Processes of GaAsSb/GaAs(001)
9. Structural Dynamics of Adsorption Equilibrium for Iodine Adsorbed on Au(111)
10. In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates
11. Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction
12. Synchrotron Radiation-Based Techniques Available at QST Advanced Characterization Nanotechnology Platform (National Institutes for Quantum and Radiological Science and Technology)
13. In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN
14. In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires
15. In situ synchrotron X-ray reciprocal space mapping during InGaN/GaN heterostructure nanowire growth
16. Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping
17. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors
18. Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction
19. Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction
20. Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)
21. In situ X-ray measurement of changes in buried structure during crystal growth
22. Surface X-ray diffraction during GaAs/MnSb/Ga(In)As epitaxial growth
23. Nitride-MBE system for in situ synchrotron X-ray measurements
24. Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
25. Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction
26. Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction
27. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction
28. Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction
29. In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE
30. Spontaneous formation of suboxidic coordination around Co in ferromagnetic rutile Ti0.95Co0.05O2 film
31. Role of Liquid Indium in the Structural Purity of Wurtzite InAs Nanowires That Grow on Si(111)
32. Quantitative monitoring of InAs quantum dot growth using X-ray diffraction
33. Acute and obtuse rhombohedrons in the local structures of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3
34. Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE
35. Erratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]
36. X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth
37. X-ray Diffraction Study of Crystal Growth Dynamics during Molecular-Beam Epitaxy of III–V Semiconductors
38. Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates
39. High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs
40. Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping
41. In-situ x-ray characterization of wurtzite formation in GaAs nanowires
42. Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
43. Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
44. GaAs Surface under Molecular-Beam Epitaxial Growth Conditions
45. Real-Time Structural Analysis of Compositionally Graded InGaAs/GaAs(0 0 1) Layers
46. X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth
47. In Situ Electrochemical, Electrochemical Quartz Crystal Microbalance, Scanning Tunneling Microscopy, and Surface X-ray Scattering Studies on Ag/AgCl Reaction at the Underpotentially Deposited Ag Bilayer on the Au(111) Electrode Surface
48. Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy
49. Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots
50. Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots
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