259 results on '"Sze, Simon"'
Search Results
2. The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
3. An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs
4. Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
5. Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
6. Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress
7. Investigation of Threshold Voltage and Drain Current Degradations in Si$_{\text{3}}$N$_{\text{4}}$/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation
8. Abnormal On Current Tendency in Saturation Region between High and Light Carbon Doped buffer layer in p-GaN HEMT
9. Interfacial Variation in HfO2-Based Resistive Switching Devices with Titanium Electrodes under Asymmetric Bias Operation
10. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation
11. A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications
12. Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory
13. A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory
14. Use of a supercritical fluid treatment to improve switching region in resistive random access memory
15. Radiation hardness of InWZnO thin film as resistive switching layer
16. A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory
17. A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)
18. Investigating Selectorless Property within Niobium Devices for Storage Applications
19. Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions
20. Improvement of Strained Negative Bias Temperature Instability in Flexible LTPS TFTs by a Stress-Release Design
21. Degradation Mechanism Differences between Tin- and Tanelectrode Hzo-Based Ferams Analyzed by Current
22. Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory
23. Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation
24. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]
25. Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique
26. Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory
27. Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory
28. Impact of annealing environment on performance of InWZnO conductive bridge random access memory
29. Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film
30. Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes
31. Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory
32. Investigation of Degradation Behavior During Illuminated Negative Bias Temperature Stress in P-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors
33. MOSFETs
34. On the Optimization of Performance and Reliability in a-InGaZnO Thin-Film Transistors by Versatile Light Shielding Design
35. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM
36. Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors
37. Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory
38. Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments
39. Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions
40. A high-speed MIM resistive memory cell with an inherent vanadium selector
41. Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory
42. Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories
43. Enhancing Hot-Carrier Reliability of Dual-Gate Low-Temperature Polysilicon TFTs by Increasing Lightly Doped Drain Length
44. Annealing effects on resistive switching of IGZO-based CBRAM devices
45. Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices
46. Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
47. Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory
48. Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology
49. A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
50. Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.