70 results on '"Slesazeck, S."'
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2. A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
3. Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions
4. Versatile experimental setup for FTJ characterization
5. Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide
6. High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays
7. Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance
8. Publisher's Note: “A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films” [Appl. Phys. Lett. 120, 022901 (2022)]
9. A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
10. Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions
11. Negative capacitance devices: sensitivity analyses of the developed TCAD ferroelectric model for HZO
12. Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence
13. 16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
14. Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions
15. Next generation ferroelectric materials for semiconductor process integration and their applications
16. Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
17. Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors
18. Built‐in bias fields for retention stabilisation in hafnia‐based ferroelectric tunnel junctions
19. Memory technology—a primer for material scientists
20. Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)
21. The Past, the Present, and the Future of Ferroelectric Memories
22. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
23. Next Generation Ferroelectric Memories enabled by Hafnium Oxide
24. Ferroelectric HfO2 for Memory Applications and Unconventional Computing
25. IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF
26. Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
27. Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation
28. Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2
29. Domain Formation in Ferroelectric Negative Capacitance Devices
30. On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
31. Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology
32. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
33. Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology
34. Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETs
35. Physical and circuit modeling of HfO2 based ferroelectric memories and devices
36. CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes
37. Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories
38. Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits
39. Novel ferroelectric FET based synapse for neuromorphic systems
40. Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches
41. A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
42. High endurance strategies for hafnium oxide based ferroelectric field effect transistor
43. Analysis of Vth variability in NbOx-based threshold switches
44. Impact of field cycling on HfO2 based non-volatile memory devices
45. Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays
46. Versatile resistive switching in niobium oxide
47. Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
48. Unfolding principle gives insight into physics behind threshold switching in a NbO memristor
49. Investigation of the reliability degradation of scaled SONOS memory transistors
50. On the voltage scaling potential of SONOS non-volatile memory transistors
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