45 results on '"Sleeckx, E."'
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2. THE CONSENS PROJECT: A METHODOLOGY AND INTEGRATION PLATFORM TO OPTIMISE TIME, QUALITY AND COST IN THE CONCURRENT PRODUCT DEVELOPMENT PROCESS
3. Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
4. Enabling Technologies II: CONSENS Tools
5. Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology
6. Impact of the combination of stress buffer layer and wafer level underfill on 3D IC assembly using thermal compression bonding
7. Characterization of inorganic dielectric layers for low thermal budget wafer-to-wafer bonding
8. Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal
9. 3D IC process development for enabling chip-on-chip and chip on wafer multi-stacking at assembly
10. Challenges and solutions on pre-assembly processes for thinned 3D wafers with micro-bumps on the backside
11. Reliability of 3D package using wafer level underfill and low CTE epoxy mold compound materials
12. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
13. Barrier and seed repair performance of thin RuTa films for Cu interconnects
14. Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration
15. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
16. Impact of thinning and through silicon via proximity on High-k / Metal Gate first CMOS performance
17. Self Aligned CuGeN Process for 32/22nm Nodes and Beyond
18. Performance improvement of tall triple gate devices with strained SiN layers
19. Optimization of low temperature silicon nitride processes for improvement of device performance
20. Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing
21. Characterisation and integration feasibility of JSR’s low-k dielectric LKD-5109
22. Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers
23. Electrical Characterisation of Silicon-Rich-Oxide Based Memory Cells Using Pulsed Current-Voltage Techniques
24. Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric
25. Integration feasibility of porous SiLK* semiconductor dielectric
26. Temperature dependence of the optical gap in thin amorphous films of As 2 S 3 , As 2 Se 3 and other basic non-crystalline chalcogenides
27. Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric
28. On the optical constants of amorphous GexSe1−x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition
29. Photodarkening induced at low temperatures in amorphous GexSe100−x films
30. Optical properties of amorphous Se films prepared by PECVD
31. Holographic investigations of photoinduced changes in PECVD GeSe thin films
32. Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films
33. Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100-x films
34. Optical gap and Urbach edge slope in a-Se
35. The influence of temperature on the optical absorption edge shift induced by band‐gap illumination in thin amorphous GeSe2 films
36. A review of the specific role of oxygen in irreversible photo- and thermally induced changes of the optical properties of thin film amorphous chalcogenides
37. Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films
38. Structural and optical properties of amorphous selenium prepared by plasma-enhanced CVD
39. Plasma-enhanced chemical vapour deposition of amorphous GexSe1−x films
40. On the origin of photo-induced and thermally induced irreversible bleaching of amorphous Ge-Se films
41. Plasma-enhanced C.V.D. of amorphous GexS1-x, and GexSe1-x films
42. Review of flash design rules for closed-die forgings
43. Dynamic Behavior of Healing Bones
44. Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells
45. Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line
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