44 results on '"Shaneyfelt, Marty R."'
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2. Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts
3. Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models
4. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation-hardened CMOS devices and circuits - LDRD Project (FY99)
5. A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report
6. Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in${\rm TaO}_{\rm x}$ Memristors
7. SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks
8. Proton-Induced Upsets in SLC and MLC NAND Flash Memories
9. A Comparison of the Radiation Response of ${\rm TaO}_{\rm x}$ and ${\rm TiO}_2$ Memristors
10. SEGR in SiO2-Si3N4 stacks
11. Semi-Empirical Model for SEGR Prediction
12. Hardness Assurance Testing for Proton Direct Ionization Effects
13. SOI Substrate Removal for SEE Characterization: Techniques and Applications
14. Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs
15. The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets
16. Radiation Effects in 3D Integrated SOI SRAM Circuits
17. Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains
18. Hardness assurance testing for proton direct ionization effects
19. SOI substrate removal for SEE characterization: Techniques and applications
20. Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques
21. The Effect of High-Z Materials on Proton-Induced Charge Collection
22. Heavy Ion Testing With Iron at 1 GeV/amu
23. Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements
24. Effects of Moisture on Radiation-Induced Degradation in CMOS SOI Transistors
25. An Embeddable SOI Radiation Sensor
26. Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM
27. Heavy-Ion Induced Charge Yield in MOSFETs
28. Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
29. Effects of moisture on radiation-induced degradation in CMOS SOI transistors
30. Heavy ion testing at the galactic cosmic ray energy peak
31. Moisture Effects on the 1/F Noise Of Mos Devices
32. Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides
33. Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing
34. Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging
35. Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM
36. Test Procedures for Proton-Induced Single Event Latchup in Space Environments
37. Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics
38. Radiation Effects in MOS Oxides
39. Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation
40. Test procedures for proton-induced single event latchup in space environments
41. Total Ionizing Dose Effects in NOR and NAND Flash Memories
42. Radiation Response and Variability of Advanced Commercial Foundry Technologies
43. Implications of Characterization Temperature on Hardness Assurance Qualification
44. Elimination of Enhanced Low-Dose-Rate Sensitivity in Linear Bipolar Devices Using Silicon-Carbide Passivation
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