100 results on '"Schroter, Michael"'
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2. Transient improvement of the postoperative pediatric cerebellar mutism syndrome following intravenous midazolam injection
3. A Physics-Based Analytical Formulation for the Tunneling Current Through the Base of Bipolar Transistors Operating at Cryogenic Temperatures
4. A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure
5. Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs
6. Geometry scalable compact modeling of GaAs HBTs
7. Device modeling tools and their application to SiGe HBT development
8. Thermal impedance of SiGe HBTs: Characterization and modeling
9. Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs
10. Corrections to “1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices”
11. Analytical Modeling and Numerical Simulation of Nonlinear Thermal Effects in Bipolar Transistors
12. Methods for Extracting the Temperature- and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies
13. Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System
14. A W-Band SiGe-HBT Colpitts VCO for Millimeter-Wave Applications with an Analog Tuning Range of 12%
15. Evaluation of Stacked-CNTFET Structures for High-performance Applications
16. Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling
17. LO Chain (×12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption
18. 1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
19. Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs
20. CNTFET Technology for RF Applications: Review and Future Perspective
21. X- and Ku-Band SiGe-HBT Voltage-Controlled Ring Oscillators for Cryogenic Applications
22. Corrections to “Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs”
23. Compact formulation for the bias dependent quasi-static mobile charge in Schottky-barrier CNTFETs
24. Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K
25. 3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
26. VerilogAE: An Open Source Verilog-A Compiler for Compact Model Parameter Extraction
27. High-Frequency Performance Study of CNTFET-Based Amplifiers
28. Integral Charge-Control Relations
29. Self-Heating Characterization and Thermal Resistance Modeling in Multitube CNTFETs
30. 82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency
31. On the Modeling of the Avalanche Multiplication Coefficient in SiGe HBTs
32. 12-mW 97-GHz Low-Power Downconversion Mixer With 0.7-V Supply Voltage
33. Architecture and Advanced Electronics Pathways Toward Highly Adaptive Energy- Efficient Computing
34. A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels
35. Carbon nanotube Schottky diodes performance study: static and high-frequency characteristics
36. Three-Dimensional Transport Simulations and Modeling of Densely Packed CNTFETs
37. Methods for Determining the Collector Series Resistance in SiGe HBTs—A Review and Evaluation Across Different Technologies
38. Analysis of the Transistor Tetrode-Based Determination of the Base Resistance Components of Bipolar Transistors—A Review
39. Capacitively Loaded Inverted CPWs for Distributed TRL-Based De-Embedding at (Sub) mm-Waves
40. Physics-based modeling of sige HBTs with fj of 450 GHz with HICUM Level 2
41. Evaluation of the impact of the external collector resistance on results from parameter scaling for heterojunction bipolar transistors
42. Analysis of screening effects in multiple-gate and gate-all-around Si NW array FETs
43. Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo
44. Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs
45. Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors
46. A Closed-Form Solution for the Low-Current Collector Transit Time in Group IV and Group III-V HBTs
47. SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
48. Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
49. Terahertz RF Electronics and System Integration [Scanning the Issue]
50. Modeling of SiGe HBTs with (fT, fmax) of (340, 560) GHz based on physics-based scalable model parameter extraction
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