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9. A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

17. Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies

20. Comprehensive investigations of CoWP metal-cap impacts on low-k TDDB for 32nm technology application

40. Highly Manufacturable and Cost-effective Single TaxC / HfxZr(1-x)O2 Gate CMOS Bulk Platform for LP Applications at the 45nm Node and Beyond

41. CMP-less Co-Integration of Tunable Ni-TOSI CMOS for Low Power Digital and Analog Applications

42. A Cost-Effective Low Power Platform for the 45-nm Technology Node

50. New Extensive MVHR Breakdown Models

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