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2. Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

3. Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

4. Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

5. Origins and implications of increased channel hot carrier variability in nFinFETs

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