49 results on '"Mitsuhashi, R."'
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2. ANION–CATION VERSUS WEAK INTERMOLECULAR INTERACTIONS IN THE STRUCTURES OF Et4N+, Pr4N+, AND Bu4N+ CATION SALTS WITH THE [W(CN)6(bpy)]2– ANION
3. Anion—cation versus weak intermolecular interactions in the structures of Et4N+, Pr4N+, and Bu4N+ cation salts with the [W(CN)6(bpy)]2– anion
4. Results of Vibrational and Thermal Test for MOLI Laser Transmitter
5. Two-Dimensional Mixed-Metal Complexes Composed of Mixed-Valent Dinuclear Ruthenium(II,III) Carboxylate and Tetracyanidopalladate(II) Units
6. Magnetic Material Based on Mixed-Valent Dinuclear Pivalate and Cyanidometalate
7. Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control
8. Hyperspectral sensor HSC3000 for nano-satellite TAIKI
9. Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications
10. Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
11. Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
12. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
13. Cost-Effective Low $V_{t}$ Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and $\hbox{Yb}{+}\hbox{P}$ Coimplant (nMOS)
14. Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
15. Demonstration of Metal-Gated Low $V_{t}$ n-MOSFETs Using a Poly-$\hbox{Si/TaN/Dy}_{2}\hbox{O}_{3}/\hbox{SiON}$Gate Stack With a Scaled EOT Value
16. Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
17. Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window
18. Low Vt Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases
19. Nitrogen Profile and Dielectric Cap Layer (Al2O3, Dy2O3, La2O3) Engineering on Hf-Silicate
20. Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V Vt Ni-FUSI CMOS transistors
21. A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack
22. Oxygen-Vacancy-Induced Vt shift in La-containing Devices
23. Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
24. Ni-based FUSI gates: CMOS Integration for 45nm node and beyond
25. PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application
26. 45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
27. Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
28. 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
29. Comparison of thermal and plasma oxidations for HfO2/Si interface
30. Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation
31. In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system
32. Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition
33. A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process
34. Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks
35. Thermal Instability of Poly-Si Gate Al2O3 MOSFETs
36. A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process
37. Auger electron spectroscopy and ion scattering spectroscopy studies of altered layer formation in AlN thin film prepared by post-irradiation with N2+ ions
38. Enrichment of Al in the topmost surface of AlN crystalline film prepared by post‐irradiation
39. Development of an avatar language chatting system and its communication experiment using a Japanese communications satellite
40. RHEED-ISS study on the surface at high temperature
41. ChemInform Abstract: IR Combination Band Intensities of C -H Out-of-Plane Vibrations for Pyridine and Its Deuterium Derivatives in CS2Solution.
42. Comparison of multiple satellites diversity characteristics between rain and snow attenuations for 14/12 GHz band
43. Detection of a straight metal tube by snow search radar
44. Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric
45. Multiple satellites diversity characteristics in snowing climate and system application for 14/12 GHz band
46. AlN film growth under N/sub 2//sup +/ ion bombardment onto Al surface
47. Nanosatellite mothership-daughtership experiment by Japanese universities
48. Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS
49. Low Power CMOS Featuring Dual Work Function FUSI on HfSiON and 17ps Inverter Delay
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